Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs

Ioannou, D.P.; Tan, Yue; Logan, R.; Bandy, K.; Achanta, Ravi; Wang, P.C.; Brochu, D.; Jaffe, M. J.

doi:10.1109/irps.2018.8353697

Cited by 4 publications

(2 citation statements)

References 5 publications

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“…10. HCIinduced degradation is also affected by operating frequency [46], [47]. However, whether there is recovery phase in the HCI effect needs further study.…”

Section: Model Formulamentioning

confidence: 99%

Development and Challenges of Reliability Modeling From Transistors to Circuits

Yang

Sang

Wang

et al. 2023

IEEE J. Electron Devices Soc.

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The integration density of electronic systems is limited by the reliability of the integrated circuits. To guarantee the overall performance, the integrated circuit reliability must be modeled and analyzed at the early design stage. This paper reviews some of the most important intrinsic aging mechanisms of MOSFETs and elaborates the physical mechanism of the coupling between aging effects. Then the progress in reliability modeling under static and dynamic operational voltages is reviewed. It is found that although these models can accurately predict the degradation in short term, they are with large errors for the long-term degradation prediction. Besides, for the circuit-level reliability modeling and simulation approach, there are still problems to be solved. This article aims to provide guidance for researchers and practitioners in integrated circuit field, and highlight the challenges for reliability research. It is of great significance to the optimization of the reliability of integrated circuits.

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“…10. HCIinduced degradation is also affected by operating frequency [46], [47]. However, whether there is recovery phase in the HCI effect needs further study.…”

Section: Model Formulamentioning

confidence: 99%

Development and Challenges of Reliability Modeling From Transistors to Circuits

Yang

Sang

Wang

et al. 2023

IEEE J. Electron Devices Soc.

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“…However, these papers focus on discussing single circuit instead of RF system. Ioannou et al 4 discuss the result of LNA with and without hot carrier stress. Doukkali et al 5 present the process-voltage-temperature (PVT) reliability of 0.25-μm BiCMOS Technology LNA.…”

Section: Introductionmentioning

confidence: 99%

Reliability evaluation and redesign methodology for RFCMOS transceiver frontend circuits in sub‐6‐GHz band of fifth‐generation new radio communication based on the reliability model

Hsieh

Wang

Yeh

et al. 2021

Circuit Theory & Apps

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A proposed RFCMOS reliability subcircuit model to evaluate the transceiver frontend circuits for 5G new radio (NR) networks sub-6-GHz application is presented. When studied 1-year operational performance considering hotcarrier stress in circuit level, the common-source LNA circuit is robust in gain and noise figure than common-gate common-source LNA circuit, and Class-A power amplifier loses gain 52%. However, in transceiver system level, the receiver-used two-stage common-gate common-source LNA shows robust than used common-source LNA. The transmitter's gain and output power exhibit a strong relationship with performance of Class-A power amplifier after hotcarrier stress. When the receiver using the overdriven bias 3.1 V 1 year predicted by proposed model, the EIS is À89.7 dBm, which still meet 5G FR1 standard though the gain degraded to 17 dB; transmitter overdriven at bias 3.3 V, the least output power is 19.1 dBm, which still meet 5G FR1 standard, though the IIP3 worsen to 13%.

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Impact of Hot Carrier Stress on RF FOMs in 10-nm Bulk N-Channel FinFETs

Gupta

Vega

et al. 2019

2019 IEEE International Integrated Reliability Workshop (IIRW)

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Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs

Cited by 4 publications

References 5 publications

Development and Challenges of Reliability Modeling From Transistors to Circuits

Development and Challenges of Reliability Modeling From Transistors to Circuits

Reliability evaluation and redesign methodology for RFCMOS transceiver frontend circuits in sub‐6‐GHz band of fifth‐generation new radio communication based on the reliability model

Impact of Hot Carrier Stress on RF FOMs in 10-nm Bulk N-Channel FinFETs

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