Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model

Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs

“…Alike the results presented in previous studies [8,17,18], the I RE pS parameter of HICUM compact model has been extracted for each DUTs and each stress conditions (for V BE ranging from 0.5V to 0.7V). The maximum values obtained for this parameter at t=10ks is equal to 22fA for the smallest and 80fA for the largest geometry, respectively.…”

A unified aging compact model for hot carrier degradation under mixed-mode and reverse E-B stress in complementary SiGe HBTs

“…Moreover, advanced circuit applications require the transistors to operate closer and even beyond their classical safe-operating areas (SOA). Hence, reliability-aware circuit design has become a mandatory approach [2] employing accurate aging models [3] to facilitate time and cost-effective circuit design. Complementary circuit functionalities employing both NPN and PNP bipolar transistors are of particular interest owing to their large variety of RF, analog and high speed digital applications [4].…”

Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs

“…However, deviations occurred at some point in time (typically after several hours), depending on the specific stress conditions, which is thought to be related to the combined effect of SH and of II dynamics [4]. Nevertheless, in the literature the physics of this mechanism was either only partially analyzed [5], [7], or explained by empirical [4] or approximated analysis [6] that are better suited for aging compact models to be used in circuit simulations than for TCAD aging models to be exploited for degradation-aware device optimization. This calls for more comprehensive modeling efforts, especially with further device scaling.…”

“…A self-consistent simulation methodology that considers SH and the effect of 2D electric field distribution is then introduced that allows correctly reproducing mixed-mode stress data by ascribing the degradation to hot holes generated by II at the collector/base junction that drift towards the E-B spacer oxide. The developed model gives a direct empirical connection between trap generation rate and II rate in contrast to earlier reports that either: i) computed the generation rate from hot carriers models [5] or from the energy distribution function of carriers [7]; or ii) derived an approximated analytical solution for the generated trap density with generation rates used as fitting parameters [6].…”