2021
DOI: 10.1021/acsnano.0c10864
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Hot-Carrier Cooling in High-Quality Graphene Is Intrinsically Limited by Optical Phonons

Abstract: Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand the relaxation dynamics after photoexcitation. These dynamics contain a sub-100 fs thermalization phase, which occurs through carrier–carrier scattering and leads to a carrier distribution with an elevated temperature. This is followed by a picosecond cooling… Show more

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Cited by 55 publications
(74 citation statements)
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References 63 publications
(132 reference statements)
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“…We observe that the PC for low LLs does not saturate, whereas the high LL PC saturates much easier. This is consistent with our model since the PC for low LLs is mainly a sum of the electron and hole currents; whereas in the high LL regime the PC saturates much easier since it is the difference of electron and hole currents and thus bottlenecked by the difference of relaxation rates of electrons and holes [25,45]. This is evidenced by the observed markedly different saturation powers, P 0 for low and high LL ( We also see a peculiar double-bent saturation behavior which occurs predominately at high LLs, as shown in the inset of Fig.…”
Section: Discussionsupporting
confidence: 91%
“…We observe that the PC for low LLs does not saturate, whereas the high LL PC saturates much easier. This is consistent with our model since the PC for low LLs is mainly a sum of the electron and hole currents; whereas in the high LL regime the PC saturates much easier since it is the difference of electron and hole currents and thus bottlenecked by the difference of relaxation rates of electrons and holes [25,45]. This is evidenced by the observed markedly different saturation powers, P 0 for low and high LL ( We also see a peculiar double-bent saturation behavior which occurs predominately at high LLs, as shown in the inset of Fig.…”
Section: Discussionsupporting
confidence: 91%
“…The HFD can be detected in a pump–probe experiment as a photobleaching (PB) signal, 56 58 i.e., decreased probe absorption compared with equilibrium, because of Pauli blocking of interband transitions caused by the photogenerated e/h. The excess energy of the hot charge-carriers is released to the lattice via electron–phonon scattering with optical phonons, 62 64 anharmonically coupled to acoustic phonons. 62 65 Hot carriers’ cooling occurs on a few-ps time-scale 56 58 , 60 , 65 and is influenced, through the activation of additional relaxation channels, by the dielectric environment (e.g., via near-field coupling to hyperbolic optical phonons of substrate or encapsulant material 66 ).…”
Section: Introductionmentioning
confidence: 99%
“…The presence and an active role of hot phonons is also commonly revealed in the analysis of the time dependence of electronic properties upon nonequilibrium conditions. Given the plethora of ultrafast pump-probe experiments nowadays accessible, the physical properties under investigation can vary in a wide range, from optical probes (transmission [77,84,85,87,150,151], reflectivity [13,89,[110][111][112][152][153][154], absorption [91,[155][156][157][158]) to non-linear optics [86], time-resolved photoelectron spectroscopy [108,132,133,[159][160][161][162], photoluminescence [83,163], time-dependent Raman probes [164], ultrafast diffraction [6,44,109,126,[165][166][167][168][169][170][171].…”
Section: Detecting Hot Phononsmentioning
confidence: 99%