Horizontally‐Oriented Growth of Organic Crystalline Nanowires on Polymer Films for In‐Situ Flexible Photodetectors with Vis‐NIR Response and High Bending Stability (Adv. Funct. Mater. 15/2023)

Song, Jian; Wang, Xingyu; Liao, Jihui; Zhou, Wei; Song, Jimei; Zhao, Zihao; Zhang, Lingyu; Joselevich, Ernesto; Xu, Jinyou

doi:10.1002/adfm.202370094

Cited by 3 publications

(12 citation statements)

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“…After the annealed sapphire was cut into 1 × 1 cm 2 pieces, hydrophobic treatment was performed. [46,47] The growth of self-oriented CuPc nanowires was carried out in a dual-temperature tube furnace (TF1200-60, Micro-x, China). CuPc powder (10 mg) was evaporated at 450 °C and then deposited on the sapphire surface at 240 °C and a N 2 flow (50 sccm).…”

Section: Methodsmentioning

confidence: 99%

“…We first prepared high-density oriented CuPc nanowires with lengths of 50-150 μm on an annealed M-plane sapphire surface (Figure 1a) by evaporating commercially available CuPc powder at 240 °C. [46][47][48] These nanowires are then stored at ambient conditions without special protection (e.g., vacuum or inert gas). Even with high-velocity gas flow, it is impossible to remove these self-oriented nanowires from their growth substrate, indicating that these self-oriented nanowires have a much stronger interaction with their underlying substrate than the commonly reported freestanding nanowires.…”

Section: Optical Pufsmentioning

confidence: 99%

“…High magnification SEM observation (Figure 1c; Figure S1, Supporting Information) reveals that these nanowires grow in parallel along the direction defined by the nanogrooves, instead of the symmetric crystallographic orientations of the underlying sapphire. [46,[48][49][50] The X-ray diffraction (XRD, Figure S2, Supporting Information) and Raman spectra (Figure S3, Supporting Information) of these nanowires match that of the CuPc powder, hence, no chemical reaction occurs during the vapor deposition process. Figure 1d shows a representative device with 16 × 16 arrays of gold electrodes.…”

Section: Optical Pufsmentioning

confidence: 99%

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Physically Unclonable Functions Based on Self‐Oriented Nanowires

Zhao,

Wang,

Zhang

et al. 2023

Adv Materials Technologies

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As scaling down to the nanoscale, the dramatically increased morphological deviation between nanostructures becomes a major challenge in implementing large‐scale nanodevices. On the other side of the coin, the often‐undesirable rich non‐repeatable randomness introduced during nanostructure growth and subsequent device fabrication is of great value in the implementation of physically unclonable functions (PUF), a booming innovative security primitive. Herein, it is shown that the self‐oriented organic nanowires grown on a faceted surface through a vapor transport process are advanced building blocks for the implementation of two novel PUFs. An optical PUF is first demonstrated by exploiting the unclonable morphological randomness of the self‐oriented nanowires (e.g., length, thickness, density, and location), which can provide an entity‐specific primary encryption for nanowire devices. Next, these nanowires are integrated into photodetector arrays directly on their growth substrate and accordingly enable an electrical PUF based on the inherent resistance variation between detector cells. Furthermore, by combining these two PUFs, a secondary encryption with higher security is proposed for information communication. The implementation of nanowire‐based PUFs not only opens a new device direction to exploit the annoying unclonable randomness of bottom‐up nanowires, but also provides innovative label‐free security primitives for emerging nanowire‐based devices and systems.

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Section: Methodsmentioning

confidence: 99%

Section: Optical Pufsmentioning

confidence: 99%

Section: Optical Pufsmentioning

confidence: 99%

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Physically Unclonable Functions Based on Self‐Oriented Nanowires

Zhao,

Wang,

Zhang

et al. 2023

Adv Materials Technologies

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“…[15,16] Compared to previous guided growth on a flat single-crystal surface, which requires specific lattice matching between the growing nanowires and their supporting substrate, [6,11,12] this guided growth through the graphoepitaxy effect on a faceted surface has proven to be more general due to the increased tolerance of lattice-mismatch [15,16] or even the elimination of lattice matching. [17][18][19] For example, aligned nanowires of various inorganic semiconductors (e.g., GaN, [15,20] ZnO, [21] ZnSe, [22] ZnTe, [23] CdSe, [24] ZnS, [25] CdS, [16] CsPbBr 3 [26] ) have been successively fabricated based on the graphoepitaxial effect of the self-formed nanofeatures on a single-crystal surface. Recent work has also demonstrated the self-assembly of organic molecules into uniaxially oriented nanowires along hydrophobic nanogrooves, by combining this unique graphoepitaxial effect and the hydrophobic state of a self-assembled monolayer of longchain molecules (e.g., OTS, PDMS).…”

Section: Introductionmentioning

confidence: 99%

Guided Organic Crystalline Nanowires by Directional Friction‐Transferred Poly(Tetrafluoroethylene) Nanogrooves and Their Monolithic Phototransistors

Li,

Zhou,

Cai

et al. 2024

Adv Materials Technologies

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The monolithic integration of bottom‐up nanowires into devices requires rational growth of aligned nanowires. Of the proposed aligned growth methods, few are sufficiently general to be applicable to diverse materials and substrates. In this work, oriented poly(tetrafluoroethylene) (PTFE) grooves with nanoscale depth and width are transferred onto different substrates through a simple directional mechanical friction. This friction is achieved in a few seconds by a program‐driven handwriting machine. Various organic molecules (e.g., Alq3, NiPc, CoPc, CuPc, F16CuPc) are therefore assembled into oriented crystalline nanowires on the surface of Si, Si/SiO2, and glass. The self‐alignment of these nanowires enables a scalable device fabrication directly on growth substrates, eliminating structural damage and contamination during post‐growth alignment. For example, using the aligned F16CuPc nanowires on PTFE‐coated Si/SiO2 wafers, back‐gate field‐effect phototransistors are fabricated in a scalable manner by directly depositing an array of micro‐sized electrodes. Statistical results show that these phototransistors operate in n‐type enhancement mode with thresholds of a few volts. In addition, they exhibit fast photoresponse on the order of tens of milliseconds and long‐term stability in the vis–NIR spectrum. The generality of this guided nanowire growth and resulting monolithic devices offer new opportunities for the monolithic integration of nanowire‐based devices.

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“…To date, a number of metal‐catalyzed inorganic nanowires (e.g., GaN, [ 13,16 ] ZnO, [ 14 ] ZnS, [ 17 ] ZnSe, [ 18 ] ZnTe, [ 19 ] CdS, [ 20 ] and CdSe [ 21 ] ) and non‐catalyzed nanowires of CsPbBr 3 perovskite have been fabricated on faceted crystalline surfaces via graphoepitaxial growth. [ 22,23 ] Recently, the generality of graphoepitaxial growth in guiding self‐assembled nonluminous metal phthalocyanine molecules into forming oriented organic nanowires has been demonstrated on amorphous surfaces, such as flexible plastic films [ 24 ] and rigid substrates. [ 25 ] Compared to the noteworthy advances achieved in controlling nanowire orientation, less efforts have been invested on controlling nanowire position.…”

Section: Introductionmentioning

confidence: 99%

Selective‐Area Growth of Aligned Organic Semiconductor Nanowires and Their Device Integration

Wang,

Luo,

Liao

et al. 2023

Adv Funct Materials

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The simultaneous control of the orientation and position of organic semiconductor nanowires remains a major challenge when integrating them into monolithic devices. In this study, tris(8‐hydroxyquinoline)aluminum(III) (Alq3) molecules are self‐assembled into single‐crystalline nanowires with consistent orientation and predictable positions by selective‐area graphoepitaxial growth. The nanowire orientation is determined by parallel nanogrooves on a periodically modified faceted sapphire surface, and the position is simultaneously defined using a shadow mask. Computational fluid dynamics simulations showed that the mass flow field over the sapphire surface is tailored by the mask, resulting in preferential nanowire nucleation around the hole centers and leaving sufficient free space for the subsequent growth. Accordingly, the number, length, and density of the nanowires can be controlled by adjusting the mask layout. The good alignment and predictable positions of these nanowires facilitated their subsequent device integration, eliminating laborious assembly steps and potential damage after nanowire growth. Measurements from an in situ integrated two‐terminal device based on the Alq3 nanowires revealed that the nanowires exhibit a remarkable negative differential resistance and fast photoresponse in the UV region. Overall, selective‐area graphoepitaxial growth provides a versatile protocol for fabricating site‐ and orientation‐controlled organic semiconductor nanowires for the monolithic fabrication of nanowire‐based devices.

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Horizontally‐Oriented Growth of Organic Crystalline Nanowires on Polymer Films for In‐Situ Flexible Photodetectors with Vis‐NIR Response and High Bending Stability (Adv. Funct. Mater. 15/2023)

Cited by 3 publications

References 0 publications

Physically Unclonable Functions Based on Self‐Oriented Nanowires

Physically Unclonable Functions Based on Self‐Oriented Nanowires

Guided Organic Crystalline Nanowires by Directional Friction‐Transferred Poly(Tetrafluoroethylene) Nanogrooves and Their Monolithic Phototransistors

Selective‐Area Growth of Aligned Organic Semiconductor Nanowires and Their Device Integration

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