Hopping conduction via strongly localized impurity states of indium in PbTe and its solid solutions

Ravich, Yu. I.; Немов, С. А.

doi:10.1134/1.1434506

Cited by 47 publications

(34 citation statements)

References 12 publications

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“…The topologically distinct band structure of SnTe (nontrivial, x = 1) and PbTe (trivial, x = 0) involves a change in the ordering of the conduction and valence bands at L points. This implies that the band gap of the alloy Pb 1−x Sn x Te first closes and then re-opens as x increases, as shown in Figure 5 [51][52][53]. It follows that there must be a topological quantum phase transition upon varying the Pb/Sn ratio in Pb 1−x Sn x Te, and experiments indicate that it occurs near x c ≈ 0.35 at low temperature [15,[52][53][54][55][56].…”

Section: Bulk Band Structurementioning

confidence: 91%

See 1 more Smart Citation

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

Zhong

Schneeloch

et al. 2017

Crystals

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Topological crystalline insulators (TCIs) have been of great interest in the area of condensed matter physics. We investigated the effect of indium substitution on the crystal structure and transport properties in the TCI system (Pb 1−x Sn x ) 1−y In y Te. For samples with a tin concentration x ≤ 50%, the low-temperature resisitivities show a dramatic variation as a function of indium concentration: with up to ∼2% indium doping, the samples show weak-metallic behavior similar to their parent compounds; with ∼6% indium doping, samples have true bulk-insulating resistivity and present evidence for nontrivial topological surface states; with higher indium doping levels, superconductivity was observed, with a transition temperature, T c , positively correlated to the indium concentration and reaching as high as 4.7 K. We address this issue from the view of bulk electronic structure modified by the indium-induced impurity level that pins the Fermi level. The current work summarizes the indium substitution effect on (Pb,Sn)Te, and discusses the topological and superconducting aspects, which can be provide guidance for future studies on this and related systems.

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Section: Bulk Band Structurementioning

confidence: 91%

“…Experimental results for Sn 1−x In x Te (SIT) with In content up to 10% is obtained from Reference [24]. The solubility limit of In in PbTe (24%) is obtained from Reference [51]. Samples with weak metallic resistivity are shown in blue, with insulating resistivity are shown in orange, and with superconductivity are shown in green.…”

Section: Phase Diagrammentioning

confidence: 99%

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

Zhong

Schneeloch

et al. 2017

Crystals

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“…Past studies 16,22 of various transport properties in Pb 1−x Sn x Te and the impact of In doping provide a basis for understanding the present results. For In concentrations of 0.06, the In sites introduce localized states at a sharply defined energy that pins the chemical potential.…”

Section: Electrical Resistivitymentioning

confidence: 99%

“…As another test, the Hall effect and zero-field resistivity were measured on a x = 0.35, y = 0.02 crystal us- For the initial magnetoresistance data used to obtain σ(B), the measurements were performed after a significant waiting time (5 days at 5 K, 2 days at 20 K) due to slow relaxation in the resistance 22 .…”

Section: Hall Effect and Magnetoresistance Measurementsmentioning

confidence: 99%

Surface-state-dominated transport in crystals of the topological crystalline insulator In-dopedPb1−xSnxTe

Zhong

Schneeloch

et al. 2015

Phys. Rev. B

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Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentumlocked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb1−xSnxTe compounds that manifest huge bulk resistivities together with evidence consistent with topological character of the surface states for x 0.35, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determine the resistivity for temperatures beyond 20 K.

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“…More− over, behaviour of the same impurity in related compounds may be also quite different. Specifically, In impurity in SnTe is an acceptor forming the resonance states inside the valence band [4].…”

Section: Introductionmentioning

confidence: 99%

Nature of gallium deep centres in lead telluride based semiconductors

Petrenko

Plyatsko

2010

Opto-Electronics Review

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Doped with Ga lead telluride was taken as a model object to explain the nature of group-III deep levels in IV-VI semiconductors and to elucidate the vapour phase doping mechanism. For this goal, interaction of various gallium-containing molecules with defect-free crystal as well as with native defects in PbTe was considered. Formation energies for different point defects created in PbTe as a result of interaction the Ga2Te molecules, Ga2 dimers and single Ga atoms with a host crystal were calculated using density functional theory. Particularly GaPb and Gai together with formation of accompanied self interstitials Pbi in various charge states were examined. In addition we propose the new type of defects - the impurity complex (2Ga)Pb which looks like <111>-oriented gallium dumbbell. Calculations suggest the double donor behaviour and DX-like properties of this defect together with extremely low formation energy values. Namely, (2Ga)Pb centres are preferably formed under Ga2Te doping while (Ga2)Pb+Pbi ones are formed under Ga2 or Ga doping. In all cases, formation energies are negative and resulting defect concentration is determined by reaction kinetics only. Mechanisms of the lead vacancy compensation with the vapour phase doping are considered as well.

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Hopping conduction via strongly localized impurity states of indium in PbTe and its solid solutions

Cited by 47 publications

References 12 publications

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

Indium Substitution Effect on the Topological Crystalline Insulator Family (Pb1−xSnx)1−yInyTe: Topological and Superconducting Properties

Surface-state-dominated transport in crystals of the topological crystalline insulator In-dopedPb1−xSnxTe

Nature of gallium deep centres in lead telluride based semiconductors

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