Homogeneous molybdenum disulfide tunnel diode formed <i>via</i> chemical doping

Liu, Xiaochi; Qu, Deshun; Choi, Min Kyung; Lee, Changmin; Kim, Hyoungsub; Yoo, Won Jong

doi:10.1063/1.5023695

Cited by 15 publications

(20 citation statements)

References 18 publications

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“…Liu reported PVCR < 2, and I P~5 0 nA/µm. The measured peak voltage (V P ) by Pang 19 was~1.5 V, and Liu 20 reported 0.8 V, which is well above what is expected in an Esaki tunnel junction, V P ≈ (Φ n + Φ p )/2 (with Φ n and Φ p being the electron and hole degeneracies, respectively). The difference between the expected V P and its measured value suggests an additional voltage drop in the current path of these devices to account for the high V P .…”

Section: Introductionmentioning

confidence: 65%

“…6e, the peak voltages are now shifted in the 0.2-0.3 V range, with significantly lower voltages in comparison to the reports of Pang 19 and Liu. 20 Doping levels of~2.8 × 10 13 cm −2 are inferred assuming that the measured minimum V P corresponds to the junction degeneracy, Fig. 4).…”

Section: Resultsmentioning

confidence: 99%

“…NDR with a peak-tovalley current ratio (PVCR) of~2 at room temperature was reported and a peak current (I P ) of 9 pA. In the study by Liu, 20 an Al 2 O 3 -masked benzyl viologen and gold chloride enabled degenerate n-type and p-type doping, respectively, in an MoS 2 flake. Liu reported PVCR < 2, and I P~5 0 nA/µm.…”

Section: Introductionmentioning

confidence: 99%

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Two-dimensional electric-double-layer Esaki diode

et al. 2019

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Two-dimensional van der Waals materials offer unique advantages for the development of band-to-band tunneling devices given their lack of dangling bonds, atomically flat thickness and steep band edges. Here, we present the experimental demonstration of an electric double layer (EDL) Esaki junction in synthetic WSe 2 thin films. A Si-compatible process is developed for the fabrication of nanoscale FETs utilizing molecular beam epitaxy of WSe 2 performed directly on top of a high-κ dielectric at back-end-of-linefriendly temperatures (<550°C). Degenerate and abrupt doping profiles are obtained by modulating the electron/cation and hole/ anion EDLs formed at the interface between a tens-of-nanometer long WSe 2 channel and a solid polymer electrolyte, polyethylene oxide:cesium perchlorate (PEO:CsClO 4). Numerical simulations are used to determine the bias dependence of the equilibrium ion and carrier density profiles. The EDL-doped tunnel diode exhibits repeatable, gate-tunable band-to-band tunneling with negative differential resistance in the forward bias regime at temperatures up to 140 K, and strong conduction in reverse bias. A maximum peak-to-valley current ratio of 3.5 is measured at 110 K.

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Section: Introductionmentioning

confidence: 65%

Section: Resultsmentioning

confidence: 99%

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Two-dimensional electric-double-layer Esaki diode

et al. 2019

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“…metal oxides [70,121,[139][140][141], metal halide [125][126][127][128][129][130], organic molecules [125, 134-136, 146, 149, 150, 152], etc. Surface deposition/coating has the advantages of patterned doping capability, relative low doping temperature, and little crystal damage [129,133,134,153].…”

Section: Surface Deposition/coatingmentioning

confidence: 99%

“…One of the Lewis acids, AuCl3, is the most commonly used for the p-type doping process (Fig. 6(f)) [124][125][126][127][128][129][130]. AuCl4ions in AuCl3 solution would capture the electrons in TMDCs, then the Fermi-level of TMDCs moves to its valence band and leads to the p-type doping result [154].…”

Section: Surface Deposition/coatingmentioning

confidence: 99%

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

Ouedraogo

et al. 2021

Nano Res.

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Two-dimensional layered transition metal dichalcogenides (TMDCs) have demonstrated a huge potential in the broad fields of optoelectronic devices, logic electronics, electronic integration, as well as neural networks. To take full advantage of TMDC characteristics and efficiently design the device structures, one of the most key processes is to control their p-/n-type modulation. In this review, we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring, substitutional doping, surface charge transfer, chemical intercalation, electrostatic modulation, and dielectric interface engineering. The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics. Finally, challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.

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Programmable Photo‐Induced Doping in 2D Materials

Aftab

Iqbal

2022

Adv Materials Inter

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Over the past few decades, certain features of the bulk and surface properties of nanoscale two‐dimensional (2D) layered materials have been exploited to improve the performance and efficiency of optoelectronics functional devices. These findings include the role of surface modifications, including dopant engineering with chemical modifications, structural control through physical modifications, and bandgap modification through electrostatic control, but to enable n‐ or p‐type behavior in the same nanoflakes without photoresist and environmental stability in traded devices is challenging. In this state‐of‐the‐art focused review article, the most up‐to‐date and promising strategies to develop nanodevices with photoresist‐free possibilities of controlling the conduction type in 2D nanostructures based on the mechanical exfoliation of ultrathin nanomaterials are attempted to summarize. This article demonstrates how carrier type band modulation in transition metal dichalcogenides is generated by the charge storage interface or defect engineering such as optical‐electronic excitation of donor‐like states (or point defects) in BN upon illumination to configure opposite polarities, n, or the p‐type field‐effect transistor from an intrinsic semiconductor. It is believed that this brief overview of recent research on nanomaterials for application in various types of functional electronic devices may contribute in the development of future optoelectronic devices.

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Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

Cited by 15 publications

References 18 publications

Two-dimensional electric-double-layer Esaki diode

Two-dimensional electric-double-layer Esaki diode

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

Programmable Photo‐Induced Doping in 2D Materials

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