Homogeneity range and nonstoichiometric defects in IV–VI narrow-gap semiconductors

Sizov, Fiodor F.; Plyatsko, S. V.

doi:10.1016/0022-0248(88)90042-5

Cited by 20 publications

(9 citation statements)

References 13 publications

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“…Interestingly, such a homogeneity region is not commonly displayed in conventionally available thermodynamic Al–Ti–O phase diagrams, where Al 2 TiO 5 is solely represented as a single-line phase . However, a homogeneity region can also be induced by structural defects, − including Schottky, Frenkel, vacancies, and antisite exchange defects. Especially for oxides, a strong relationship may exist between vacancy concentrations and the molar volume of a given compound, resulting in increased chemical expansivities and local lattice variations. , Although Hoffmann et al never explored the possibilities of such variations, the presence of stacking faults was suggested to be a key feature found in Al 16 Ti 5 O 34 .…”

Section: Resultsmentioning

confidence: 99%

Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al₂TiO₅-Based Chemical Vapor-Deposited Coatings

et al. 2023

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Oxygen is a commonly overlooked element influencing the properties of many metal oxides. By combining several analytical in situ techniques and theoretical calculations, we demonstrate that oxygen plays a vital part in the phase formation and crystallization of Al 2 TiO 5 -based chemical vapor-deposited coatings. Rutherford backscattering spectrometry (RBS) corroborates a polymorphic transformation during crystallization. Subsequent hard X-ray photoelectron spectroscopy (HAXPES) shows that crystallization occurs through a displacive (diffusionless) mechanism. Coupled with theoretical calculations, the crystallization and co-formation of Al 2 TiO 5 , Al 6 Ti 2 O 13 , and Al 16 Ti 5 O 34 are suggested to be driven by the migration of oxygen ions and their corresponding vacancies.

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Section: Resultsmentioning

confidence: 99%

Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al₂TiO₅-Based Chemical Vapor-Deposited Coatings

et al. 2023

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“…It is well known that the real as−grown PbTe crystal contains lead vacancies in a substantial concentration [25] …”

Section: Mechanism Of Native Defects Compensationmentioning

confidence: 99%

Nature of gallium deep centres in lead telluride based semiconductors

Petrenko

Plyatsko

2010

Opto-Electronics Review

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Doped with Ga lead telluride was taken as a model object to explain the nature of group-III deep levels in IV-VI semiconductors and to elucidate the vapour phase doping mechanism. For this goal, interaction of various gallium-containing molecules with defect-free crystal as well as with native defects in PbTe was considered. Formation energies for different point defects created in PbTe as a result of interaction the Ga2Te molecules, Ga2 dimers and single Ga atoms with a host crystal were calculated using density functional theory. Particularly GaPb and Gai together with formation of accompanied self interstitials Pbi in various charge states were examined. In addition we propose the new type of defects - the impurity complex (2Ga)Pb which looks like <111>-oriented gallium dumbbell. Calculations suggest the double donor behaviour and DX-like properties of this defect together with extremely low formation energy values. Namely, (2Ga)Pb centres are preferably formed under Ga2Te doping while (Ga2)Pb+Pbi ones are formed under Ga2 or Ga doping. In all cases, formation energies are negative and resulting defect concentration is determined by reaction kinetics only. Mechanisms of the lead vacancy compensation with the vapour phase doping are considered as well.

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“…Одним из эффективных методов управления свойствами полупроводников является метод лазерной обработки, использование которого позволяет в зависимости от соотношения между энергией кванта ηω, интенсивностью лазерного излучения I и шириной запрещенной зоны E g трансформировать его приповерхностные (ηω > E g ) или объемные (ηω < E g ) свойства [1][2][3][4][5][6]. Взаимодействия мощного лазерного излучения с различными веществами носят разнообразный характер, причем не все наблюдаемые явления получили в настоящее время исчерпывающие объяснения.…”

Section: Introductionunclassified

Инверсия типа проводимости тонких пленок n-InSe под действием лазерного излучения

Кязым-заде¹,

Салманов²,

Гусейнов³

et al. 2019

Журнал Технической Физики

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Conductivity inversion in thin n -InSe films under intense pulsed laser irradiation was obser. A p – n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.

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Homogeneity range and nonstoichiometric defects in IV–VI narrow-gap semiconductors

Cited by 20 publications

References 13 publications

Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al₂TiO₅-Based Chemical Vapor-Deposited Coatings

Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al₂TiO₅-Based Chemical Vapor-Deposited Coatings

Nature of gallium deep centres in lead telluride based semiconductors

Инверсия типа проводимости тонких пленок n-InSe под действием лазерного излучения

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Homogeneity range and nonstoichiometric defects in IV–VI narrow-gap semiconductors

Cited by 20 publications

References 13 publications

Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al2TiO5-Based Chemical Vapor-Deposited Coatings

Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al2TiO5-Based Chemical Vapor-Deposited Coatings

Nature of gallium deep centres in lead telluride based semiconductors

Инверсия типа проводимости тонких пленок n-InSe под действием лазерного излучения

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Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al₂TiO₅-Based Chemical Vapor-Deposited Coatings

Role of Oxygen in Vacancy-Induced Phase Formation and Crystallization of Al₂TiO₅-Based Chemical Vapor-Deposited Coatings