2016
DOI: 10.1038/srep32250
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Homogeneity and variation of donor doping in Verneuil-grown SrTiO3:Nb single crystals

Abstract: The homogeneity of Verneuil-grown SrTiO3:Nb crystals was investigated. Due to the fast crystal growth process, inhomogeneities in the donor dopant distribution and variation in the dislocation density are expected to occur. In fact, for some crystals optical studies show variations in the density of Ti3+ states on the microscale and a cluster-like surface conductivity was reported in tip-induced resistive switching studies. However, our investigations by TEM, EDX mapping, and 3D atom probe reveal that the Nb d… Show more

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Cited by 29 publications
(30 citation statements)
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References 38 publications
(58 reference statements)
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“…On the one hand, we know that the bulk of the Nb:SrTiO3 crystals possess a homogenous distribution of aliovalent Nb ions and, without doubt, the dislocations play only a minor role for the global metallic conductivity of the matrix induced by such chemical doping, as presented by Rodenbücher et al [246]. On the other hand, in situ and in operando investigations using surface sensitive techniques of the surface layer of Nb:SrTiO3 [227] give evidence that the stoichiometry of Ti and Sr can dramatically change and the typical so-called metallic pick at the bottom of the conducting band actually disappears, which in turn "switches" the electrical properties of the surface region to become semiconducting in character.…”
Section: Electrical Properties Of the Dislocations In Tio 2 And Srtiomentioning
confidence: 99%
See 1 more Smart Citation
“…On the one hand, we know that the bulk of the Nb:SrTiO3 crystals possess a homogenous distribution of aliovalent Nb ions and, without doubt, the dislocations play only a minor role for the global metallic conductivity of the matrix induced by such chemical doping, as presented by Rodenbücher et al [246]. On the other hand, in situ and in operando investigations using surface sensitive techniques of the surface layer of Nb:SrTiO3 [227] give evidence that the stoichiometry of Ti and Sr can dramatically change and the typical so-called metallic pick at the bottom of the conducting band actually disappears, which in turn "switches" the electrical properties of the surface region to become semiconducting in character.…”
Section: Electrical Properties Of the Dislocations In Tio 2 And Srtiomentioning
confidence: 99%
“…Here, examples of the current (resistance) mapping of SrTiO 3 and TiO 2 are given in Figures 35 and 36, respectively. It should also be noticed that TEM images of SrTiO 3 :Nb give a rather homogeneous picture of the samples [246], while LCAFM measurements indicate spatial fluctuations of the conductivity at the surface [227]. layer.…”
Section: Electrical Properties Of the Dislocations In Tio 2 And Srtiomentioning
confidence: 99%
“…For oxide‐based perovskites, the required temperatures for single‐crystal synthesis typically exceed 1000 °C. Examples include the Verneuil‐ or ‘flame fusion’ technique for Nb‐doped SrTiO 3 and the Czochralski method (the industry standard for producing silicon wafers) for GdGaO 3 and NdAlO 3 . The floating‐zone method is reported for LaMnO 3 and SrRuO 3 and also for the layered perovskite La 1− x Sr 1+ x MnO 4 , an n = 1 member of the RP structural series .…”
Section: Preparation Methods For Perovskitesmentioning
confidence: 99%
“…Although high-quality single crystals of SrTi 1-x Nb x O 3 species with x > 0.1 are not available due to the low solubility limit of Nb in the lattice [16], epitaxial films with these material compositions can be fabricated by PLD [17]. As summarized in Fig.…”
Section: Pulsed Laser Depositionmentioning
confidence: 99%
“…10. 16 Schematic illustration of CAN (calcium aluminate with nanopore) gated functional oxide thin-film transistor with a three-terminal electrodes geometry. Since 30 volume percent of the CAN film is occupied with liquid water, H + and OH − ions in the CAN film move with a gate voltage application.…”
Section: Utilizing Antiferromagnetic Insulator/ferromagneticmentioning
confidence: 99%