Abstract:Homo-epitaxial growth of Si nanowires on Si (100) substrate was accomplished using a combination of anodic aluminum oxide (AAO) template and Vapor-Liquid-Solid (VLS) growth. We prepared two types of AAO templates for epitaxial growth of Si nanowires.We observed vertically grown epitaxial Si (100) nanowires in the AAO template. In addition, after leaving filled pores, Si nanowires changed their growth direction from [100] to <111>. This result shows that the walls of the pores forced the growth direction of Si … Show more
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