Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction

Chen, Pei; Kuttipillai, Padmanaban S.; Wang, Lili; Lunt, Richard R.

doi:10.1038/srep40542

Cited by 9 publications

(9 citation statements)

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“…Quantum wells are important in a range of optoelectronic devices and provide critical insight into the physical properties of quantum confined charge carriers, 2D electron gas, and tunable luminescence. The growth process was investigated by RHEED to confirm the formation of epitaxial multilayers as shown in Figure A–C (and Figure S24 in the Supporting Information for a greater number of layers) where NaCl was grown under similar conditions to homoepitaxial growth demonstrated previously . The data in Figure shows that no obvious change occurs after depositing the epitaxial barrier layer on the halide perovskite or after depositing multiple quantum well layers.…”

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confidence: 88%

“…Thin film cesium tin bromide was grown epitaxially on NaCl single crystalline substrates via reactive thermal deposition of CsBr and SnBr 2 . The crystal growth was monitored in situ and in real‐time with ultralow current reflection high‐energy electron diffraction (RHEED) that enables continuous monitoring even on insulating substrates. RHEED patterns captured during the epitaxial growth of the perovskite at room temperature are shown in Figure .…”

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confidence: 99%

“…This has likely been hindered in large part due to a number of challenges associated with the epitaxial growth of perovskites on dissimilar single crystal substrates including matching of lattice constants, lattice symmetry, coordination, wettability, thermal expansion differences, and bonding character (ionic versus covalent) . There have been only a few reports of even metal halide salt epitaxy, and only several recent studies of incommensurate Van der Waals epitaxy (or quasiepitaxy) of halide perovskite microsheets, nanorods, nanowires, and nanocrystals that are accompanied with a high degree of rotational disorder. To help understand the full potential of these exciting materials, we report a low cost vapor phase route to the epitaxial growth of single‐domain inorganic halide perovskites that is enabled by lattice matching on single crystal alkali halide salt substrates and further enhanced by tuned pseudomorphic interlayers of alloyed alkali halide salts.…”

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confidence: 99%

“…Metal halide salts are exploited for halide perovskite epitaxy to overcome many of the epitaxial growth challenges outlined above and provide an ideal range of lattice constants (5.4–6.6 Å) closely matched to those of the halide perovskites (5.5–6.2 Å), with suitable wettability, and congruent ionic bonding. Moreover, metal halide salts are also low cost, require little wafer processing prior to epitaxial growth, can support epitaxial growth at room temperature to eliminate the impact of thermal expansion mismatch, and can be wet‐etched for epitaxial lift‐off for a range of applications. In this work we focus on CsSnBr 3 as it has been shown to be a promising and air‐stable candidate in optoelectronics with a bandgap of 1.8 eV, but find this approach to be generally applicable across the halide (X) series.…”

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Unlocking the Single‐Domain Epitaxy of Halide Perovskites

Wang

Chen

Thongprong

et al. 2017

Adv Materials Inter

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COMMUNICATION (1 of 7)and CsSnI 3 has, to date, been less encouraging, with solar cell efficiencies of <5% for solution-processed thin film devices [10] that are likely limited by the low degree of crystalline ordering. [11] Indeed, structural ordering has been linked in traditional semiconductors to (a) carrier transport, where mobilities increase from amorphous-Si (1 cm 2 V −1 s −1 ) [12] to single crystalline Si (1400 cm 2 V −1 s −1 ), [13] (b) recombination rates, where unpassivated grain boundaries act as quenching sites for charge carriers and excited states, and (c) quantum confinement, which can make even Si an excellent NIR emitter with luminescent efficiency >60%. [14] These factors, among others, have motivated the recent interest in halide perovskite single crystal growth. [15] Thus, one of the main challenges for enhancing the properties of halide perovskites for high end optoelectronic applications is to obtain epitaxial crystalline films that can also be integrated into heteroepitaxial and quantum well structures. The epitaxial growth is a key step

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confidence: 88%

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confidence: 99%

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confidence: 99%

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Unlocking the Single‐Domain Epitaxy of Halide Perovskites

Wang

Chen

Thongprong

et al. 2017

Adv Materials Inter

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“…Quantum wells were fabricated with the halide perovskite as the well, and KCl was used as a barrier to study the quantum confinement effect. KCl was grown using a similar method to the homoepitaxy of NaCl reported previously . RHEED was used during growth to confirm that each layer was crystalline and smooth as indicated by streaky patterns.…”

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confidence: 99%

Epitaxial Stabilization of Tetragonal Cesium Tin Iodide

Wang¹,

Chen²,

Kuttipillai³

et al. 2019

ACS Appl. Mater. Interfaces

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A full range of optoelectronic devices has been demonstrated incorporating hybrid organic–inorganic halide perovskites including high-performance photovoltaics, light emitting diodes, and lasers. Tin-based inorganic halide perovskites, such as CsSnX3 (X = Cl, Br, I), have been studied as promising candidates that avoid toxic lead halide compositions. One of the main obstacles for improving the properties of all-inorganic perovskites and transitioning their use to high-end electronic applications is obtaining crystalline thin films with minimal crystal defects, despite their reputation for defect tolerance in photovoltaic applications. In this study, the single-domain epitaxial growth of cesium tin iodide (CsSnI3) on closely lattice matched single-crystal potassium chloride (KCl) substrates is demonstrated. Using in situ real-time diffraction techniques, we find a new epitaxially-stabilized tetragonal phase at room temperature that expands the possibility for controlling electronic properties. We also exploit controllable epitaxy to grow multilayer two-dimensional quantum wells and demonstrate epitaxial films in a lateral photodetector architecture. This work provides insight into the phase control during halide perovskite epitaxy and expands the selection of epitaxially accessible materials from this exciting class of compounds.

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