Abstract:In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron
doping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using
organo-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic
precursor, t-butylferrocene ([C14H17Fe]). Doping-induced crystallinity degradation showed different
tendency depending on conducting type of substrate. The crystal quality of epilayer grown on n-type
substrate was not degraded significantly despite of … Show more
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