Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga–Al binary solution

Adachi, Masayoshi; Maeda, Kazuo; Tanaka, A.; Kobatake, Hidekazu; Fukuyama, Hidetoshi

doi:10.1002/pssa.201001014

Cited by 27 publications

(38 citation statements)

References 4 publications

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“…Experimental details and a schematic of the facility for the Ga-Al LPE technique were described in the previous paper 24) . An alumina crucible containing the Ga-Al ux was set in a furnace at a homogeneous temperature zone.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Using the nitrided sapphire substrate as a template, DC-pulsed sputter deposition 20,21) and RF reactive sputtering techniques 22,23) have been investigated. Recently, authors have developed the Ga-Al liquid phase epitaxy (LPE) technique on the nitrided sapphire substrate, and have successfully grown 1.2-μm-thick AlN layer at 1573 K under normal pressure of N 2 gas for 5 h 24,25) . The full width at half maximum values of X-ray rocking curves for (0002) and (10-12) were 90 and 392 arcsec, respectively 26) .…”

Section: Introductionmentioning

confidence: 99%

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Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

2017

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We developed an original liquid phase epitaxy technique that uses Ga-Al solution to grow AlN on surface nitrided sapphire substrates. In this paper, effects of temperature, solution composition, and N 2 gas ow rate on the growth of AlN layer were investigated. The AlN layer grown in the solution with higher Al content and higher growth temperature tended to dissolve into the solution, thus, the AlN layers exhibited inhomogeneous surface. The growth rate had a maximum at 60 mol%Al and at 1673 K for solution composition dependence and growth temperature dependence, respectively. On the other hand, the growth rate monotonically increased with increasing N 2 gas ow rate. Based on these results, growth mechanism and rate-determined step of this liquid phase epitaxy process were discussed.

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

2017

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“…The optimal flux composition was determined previously as Ga40 mol%Al. 8) The component of Ga is also a nitride former, however, GaN dissociates around 1115 K under normal pressure of nitrogen based on the thermodynamic data. 12,13) The activity of GaN is estimated to be as low as 0.01 at 1573 K assuming an ideal solution of GaAl system.…”

Section: Methodsmentioning

confidence: 99%

“…Therefore, selective growth of AlN layer is possible using GaAl flux over 1115 K. Experimental details of the LPE process and sample characterization are explained elsewhere. 8) Figure 1(a) presents an experimental procedure for studying annealing effects to eliminate the rotational domains. The nitrided sapphire substrates were prepared through cutting from the same 2-inch nitrided sapphire substrate for comparison.…”

Section: Methodsmentioning

confidence: 99%

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Elimination of Rotational Domain in AlN Layers Grown from Ga–Al Flux and Effects of Growth Temperature on the Layers

et al. 2012

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We have been investigating crystal growth of AlN on nitrided sapphire substrates, and have grown c-axis oriented AlN layers using liquid phase epitaxy (LPE) with GaAl fluxes. However, rotational domains having 1-deg difference around the c-axis exist in the AlN layers. One of the purposes of this study is to eliminate the rotational domains. To do so, an annealing process at elevated temperatures was attempted before the LPE process. Then, its effectiveness was discussed. The origin of the rotational domain was explained using distortion of O 2¹ ions arrangement in (0002) sapphire surface. The mechanism of the eliminating the domains was discussed using the lattice vibration of the sapphire at elevated temperatures. Secondly, effects of growth temperature on the AlN layers were investigated in terms of the growth rate, surface morphology and crystal quality. The growth rate of the LPE AlN layer increased concomitantly with increasing growth temperature at 1373 1673 K. The growth rate attained at 1673 K was 0.52 µm·h ¹1 . Crystal quality is almost independent of the growth temperature in that temperature range.

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Liquid‐Phase Epitaxy

Mauk¹

2023

Digital Encyclopedia of Applied Physics

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Liquid‐phase epitaxy (LPE) is a crystal growth method that produces single‐crystal films or layers of semiconductors and other types of materials on a supporting substrate. LPE‐grown structures include light‐emitting diodes (LEDs), laser diodes, and photodetectors; energy conversion devices such as photovoltaic cells, and various magnetic and optical devices. LPE is typically affected by solidifying a film comprising solute components precipitated from a molten metallic solution at temperatures ranging from several hundred to >1200 °C. A common LPE technology is based on a crucible slider apparatus in a temperature‐programmed furnace with a hydrogen ambient at atmospheric pressure. Multiple layer depositions generate a wide range of structures, and LPE has proven especially useful for III–V compound semiconductor heterostructures. Present‐day uses of LPE stem from favorable features such as fast growth rates, low defect densities, a wide choice of impurity dopants, and straightforward formulations based on phase equilibria and kinetics data and models. While LPE was a prominent epitaxy technology in the 1970s and 1980s, nowadays LPE is relegated to niche applications. Compared to competing epitaxy technologies such as molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), LPE falls short with regard to the achievement of ultrathin layered structures, strained or lattice‐mismatched structures, abrupt interfaces, and areal uniformity. Still, there are significant application areas well served by LPE or by modified LPE techniques, as reviewed here.

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Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga–Al binary solution

Cited by 27 publications

References 4 publications

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

Elimination of Rotational Domain in AlN Layers Grown from Ga–Al Flux and Effects of Growth Temperature on the Layers

Liquid‐Phase Epitaxy

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Homoepitaxial growth of AlN on nitrided sapphire by LPE method using Ga–Al binary solution

Cited by 27 publications

References 4 publications

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

Elimination of Rotational Domain in AlN Layers Grown from Ga&ndash;Al Flux and Effects of Growth Temperature on the Layers

Liquid‐Phase Epitaxy

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Elimination of Rotational Domain in AlN Layers Grown from Ga–Al Flux and Effects of Growth Temperature on the Layers