Homoepitaxial Growth of 4H-SiC Using CH₃Cl Carbon Precursor

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

“…In the earlier years, chloromethane was utilized in diamond growth 88 as well as in growth of heteroepitaxial 3C-SiC. 89 The first attempt to utilize chloromethane for homoepitaxial growth of 4H-SiC material was reported in 2004, 90 which was followed by a more detailed investigation of the growth trends and comparison between the chlorocarbon and hydrocarbon growth. 91 The growth experiments were conducted in a lowpressure hot-wall CVD reactor at 1600 °C and 400 Torr, which was the typical pressure commonly used in this reactor for the traditional C 3 H 8 -based homoepitaxial growth of 4H-SiC.…”

Epitaxial Growth of Silicon Carbide

“…400 ∘ C for SiH 4 ) and start to form SiCl x (mainly x = 2) above about 1000 ∘ C in a H 2 ambient [182]. CH 3 Cl [183] and SiCH 3 Cl 3 [184,185] have also been used successfully for fast epitaxy of SiC. Another way is to simply add HCl into a conventional SiH 4 -based chemistry [76,172,173,186], though formation of Si clusters takes place to some extent.…”