Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source

Kato, Hiromitsu; Futako, W.; Yamasaki, Satoshi; Okushi, Hideyo

doi:10.1016/j.diamond.2004.07.010

Cited by 26 publications

(14 citation statements)

References 10 publications

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“…) confirmed a relatively smooth surface with some steps originated in mechanically polished surface of Ib diamond substrate. Similar surface morphology was reported for P‐doped homoepitaxial diamonds . An average surface roughness evaluated by atomic force microscopy (AFM) observations was about a few tens of nanometers .…”

Section: Methodssupporting

confidence: 77%

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Modification of internal barrier in hydrogen‐terminated heavily phosphorus‐doped diamond for field emission

Masuzawa

Kudo

Mimura

et al. 2016

Physica Status Solidi (a)

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In this article, a field‐induced electron emission from hydrogen (H)‐terminated surface of heavily phosphorus (P)‐doped diamond is discussed based on the barrier lowering model. Ultraviolet photoelectron spectroscopy suggested that an upward band bending of 1.45 eV existed at the surface of the diamond. A field emission characteristic as a function of the distance between an anode and diamond was measured to evaluate an average electric field in the vacuum. The barrier lowering model was introduced to estimate the reduction of the internal barrier due to the electric field at the diamond surface. The barrier lowering effect was confirmed from energies of emitted electrons, measured by combined ultraviolet photoelectron spectroscopy/field‐induced electron spectroscopy (UPS/FES). As a result, it was shown that the electron emission from n‐type diamond having NEA surface could be modulated by controlling a local electric field.

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Section: Methodssupporting

confidence: 77%

“…Similar surface morphology was reported for P‐doped homoepitaxial diamonds . An average surface roughness evaluated by atomic force microscopy (AFM) observations was about a few tens of nanometers . The surface chemical structure was characterized by X‐ray photoelectron spectroscopy (XPS) using a monochronized Al K α (1486.6 eV).…”

Section: Methodssupporting

confidence: 57%

Modification of internal barrier in hydrogen‐terminated heavily phosphorus‐doped diamond for field emission

Masuzawa

Kudo

Mimura

et al. 2016

Physica Status Solidi (a)

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“…4 However, its donor level at 0.6 eV is still very deep. [5][6][7] Theoretical models of substitutional phosphorus [8][9][10][11] show a large outward distortion of the neighboring carbon atoms. The phosphorus itself either remains on site to give a tetrahedral defect 8,9 or distorts away from one of its carbon neighbors to give a trigonal symmetry 10 or conforms to C 2v , C 3v , and D 2d symmetries.…”

Section: Introductionmentioning

confidence: 99%

Symmetry of the phosphorus donor in diamond from first principles

Butorac

Mainwood

2008

Phys. Rev. B

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Phosphorus is the only donor in diamond which can be used technologically. Several ab initio theoretical models have been published on substitutional phosphorus, and most of them have predicted that it should have tetrahedral or trigonal symmetry. Recent ab initio calculations suggested that C 2v , C 3v , and D 2d conformations reduce the total energy. Electron-paramagnetic-resonance experiments performed on phosphorus-doped diamond revealed a phosphorus-related center with tetragonal symmetry, although the signal is only observed below 20 K. We present a detailed ab initio study to show that the phosphorus substitutional atom has tetragonal symmetry at low temperatures. A study of the vibrational modes allows us to investigate the Jahn-Teller origin of the tetragonal distortion and to predict the solubility of phosphorus when grown by chemical vapor deposition with phosphine in the gas phase.

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“…An important progress was the establishment of n-type doping using phosphorus. [1][2][3] Therefore, n-type diamond seems to be the material of choice for field emitters.…”

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confidence: 99%

Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces

Takeuchi¹,

Kato²,

Ri³

et al. 2005

Applied Physics Letters

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151

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Total photoyield experiments are applied to characterize p-, intrinsic, and n-type diamond with hydrogen-terminated surfaces. On all hydrogen-terminated samples a photoelectron threshold energy of 4.4 eV is detected which is discussed in detail in this letter. We attribute this threshold to the energy gap between the valence-band maximum and the vacuum level, which is 1.1 eV below the conduction-band minimum, and generally referred to as ”negative electron affinity” (NEA). Hydrogen terminated p-type and intrinsic diamond show a rise of secondary photoyield in the excitation regime hν>5.47eV. However, this is not detected on n-type diamond. We ascribe this to the formation of an upward surface band bending in the vicinity of the n-type diamond surface which acts as an energy barrier for electrons.

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Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source

Cited by 26 publications

References 10 publications

Modification of internal barrier in hydrogen‐terminated heavily phosphorus‐doped diamond for field emission

Modification of internal barrier in hydrogen‐terminated heavily phosphorus‐doped diamond for field emission

Symmetry of the phosphorus donor in diamond from first principles

Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces

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