2008
DOI: 10.1063/1.2969042
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Holographic imaging using the phase coherent photorefractive effect in ZnSe quantum wells

Abstract: Articles you may be interested inReal-time single-shot three-dimensional and contrast-enhanced optical coherence imaging using phase coherent photorefractive quantum wells Appl. Phys. Lett. 97, 251116 (2010); 10.1063/1.3531589Depth-resolved holographic optical coherence imaging using a high-sensitivity photorefractive polymer device

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Cited by 7 publications
(2 citation statements)
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“…After cooling with phonons the substrate electrons are captured in the ZnSe QW. Due to the repulsive interaction with the periodically modulated exciton density a long living electron grating is formed in the QW leading to high diffraction efficiencies which can be used for optical data storage or real-time holographic imaging [3,4]. In order to optimize this effect a detailed understanding of the transfer and relaxation dynamics of the optically excited electrons in such structures is very important.…”
Section: Introductionmentioning
confidence: 99%
“…After cooling with phonons the substrate electrons are captured in the ZnSe QW. Due to the repulsive interaction with the periodically modulated exciton density a long living electron grating is formed in the QW leading to high diffraction efficiencies which can be used for optical data storage or real-time holographic imaging [3,4]. In order to optimize this effect a detailed understanding of the transfer and relaxation dynamics of the optically excited electrons in such structures is very important.…”
Section: Introductionmentioning
confidence: 99%
“…Thus, doped LCs with higher photorefractive sensitivity is favorable for dynamic holographic displays. Many researchers used organic/inorganic semiconductive layers to enhance photorefractive response of the doped LCs [10,[13][14][15][16][17][18], where ZnSe is a well-known semiconductive material for its large charge carrier mobility, photoconductivity, high quality and low cost [10,16,19]. Due to the high photoconductivity of the ZnSe layer, an illumination around 460 nm can lead to an effective photogeneration of charge carrier in the cell using relatively low laser intensity, resulting in a larger refractive index changes and faster transport speed compared with the one without ZnSe layer [16,19].…”
Section: Introductionmentioning
confidence: 99%