2014
DOI: 10.1063/1.4857255
|View full text |Cite
|
Sign up to set email alerts
|

Hollow metal target magnetron sputter type radio frequency ion source

Abstract: A 70 mm diameter 70 mm long compact ion source equipped with a hollow sputtering target has been designed and tested. The hollow sputtering target serves as the radio frequency (RF) plasma excitation electrode at 13.56 MHz. A stable beam of Cu(+) has been extracted when Ar was used as the discharge support gas. In the extracted beam, Cu(+) had occupied more than 85% of the total ion current. Further increase in Cu(+) ions in the beam is anticipated by increasing the RF power and Ar pressure.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2020
2020
2020
2020

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 9 publications
0
1
0
Order By: Relevance
“…Since the development of the Unbalanced Magnetron (UBM) sputtering cathode in the late 1980s (Window and Savvides, 1986a;1986b;Savvides and Window, 1986), magnetron sputtering has become the most important technology for the deposition of thin films. Furthermore, several types of magnetron sputtering cathode have been developed continuously from 1980s until recent years (Teer, 1989;Sproul et al, 1990;Kelly and Arnell, 2000;Musil et al, 2005;Rastogi et al, 1978;Swann, 1988;Münz, 1991;Sproul, 1991;Chen et al, 1994;Zheng et al, 1994;Okimura et al, 1995;1996;Muralidhar et al, 1995;Ai et al, 2000;Ejima and Shimizu, 2001;Pradhan et al, 2002;Svadkovski et al, 2002;Gudmundsson, 2008;Ehiasarian, 2010;Sasaki et al, 2012;Yamada et al, 2014;Britun et al, 2015;Motomura and Tabaru, 2017). Two types of unbalanced magnetron were described by (Window and Savvides, 1986b) as shown in Fig.…”
Section: Introductionmentioning
confidence: 99%
“…Since the development of the Unbalanced Magnetron (UBM) sputtering cathode in the late 1980s (Window and Savvides, 1986a;1986b;Savvides and Window, 1986), magnetron sputtering has become the most important technology for the deposition of thin films. Furthermore, several types of magnetron sputtering cathode have been developed continuously from 1980s until recent years (Teer, 1989;Sproul et al, 1990;Kelly and Arnell, 2000;Musil et al, 2005;Rastogi et al, 1978;Swann, 1988;Münz, 1991;Sproul, 1991;Chen et al, 1994;Zheng et al, 1994;Okimura et al, 1995;1996;Muralidhar et al, 1995;Ai et al, 2000;Ejima and Shimizu, 2001;Pradhan et al, 2002;Svadkovski et al, 2002;Gudmundsson, 2008;Ehiasarian, 2010;Sasaki et al, 2012;Yamada et al, 2014;Britun et al, 2015;Motomura and Tabaru, 2017). Two types of unbalanced magnetron were described by (Window and Savvides, 1986b) as shown in Fig.…”
Section: Introductionmentioning
confidence: 99%