Holistic yield modeling, top-down loss analysis, and efficiency potential study of thin-film solar modules

Abstract

A holistic simulation of a photovoltaic system requires multiple physical levels - the optoelectronic behavior of the semiconductor devices, the conduction of the generated current, and the actual operating conditions, which rarely correspond to the standard testing conditions (STC) employed in product qualification. We present a holistic simulation approach for all thin-film photovoltaic module technologies that includes a transfer-matrix method, a drift-diffusion model to account for the p-n junction, and a quasi-three-dimensional finite-element Poisson solver to consider electrical transport. The evolved digital model enables bidirectional calculation from material parameters to non-STC energy yield and vice versa, as well as accurate predictions of module behavior, time-dependent top-down loss analyses and bottom-up sensitivity analyses. Simple input data like current-voltage curves and material parameters of semiconducting and transport layers enables fitting of otherwise less-defined values. The simulation is valuable for effective optimizations, but also for revealing values for difficult-to-measure parameters.