Hole transport properties in gallium antimonide from 77 to 300°K

Mathur, P. C.; Jain, Sushil

doi:10.1103/physrevb.19.3152

Cited by 24 publications

(25 citation statements)

References 17 publications

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“…The conduction electrons of n-GaSb obey the three dispersion relations as provided by Seiler et al [243], Mathur et al [244], and Zhang [245], respectively. The TPSM in QDs of GaSb is being presented in accordance with the aforementioned models for the joint purpose of coherent presentation and relative assessment.…”

Section: Magnetothermopower In Quantum Dots Of Gallium Antimonidementioning

confidence: 87%

“…The hole concentration is given by (b) In accordance with the model of Mathur et al [244], the electron dispersion law in n-GaSb can be written as…”

Section: Magnetothermopower In Quantum Dots Of Gallium Antimonidementioning

confidence: 98%

“…In the absence of the crystal field splitting constant together with the assumptions of isotropic effective electron mass and isotropic spin-orbit splitting, our basic relation as given by (1.2) converts into (1.16). The TPSM in QDs of GaSb has been studied by using the models of Seiler et al [243], Mathur et al [244], and Zhang [245], respectively. It should be used as such for studying the electronic properties of n-InAs, where the spin-orbit splitting parameter (/ is of the order of band gap (E g 0 /.…”

Section: Bismuth Telluridementioning

confidence: 99%

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Thermoelectric Power in Quantum Dots Under Large Magnetic Field

Ghatak

Bhattacharya

2010

Thermoelectric Power in Nanostructured Materials

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Ah attempt is rnade to study the thermoelectric power of the electrons and holes in quantum dora of Te under large rrmgaetic field in accordance with various band models. Ir la found that the thermopower for both types of carriers decreases with increasing carrier conceaatration in art oscillatory manner. Ir also increases with increasing film thickness and the numerir values of the thermopower for holes in quantum dots of Te are greater than that of the $ame for the electrorm.

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Section: Magnetothermopower In Quantum Dots Of Gallium Antimonidementioning

confidence: 87%

“…The hole concentration is given by (b) In accordance with the model of Mathur et al [244], the electron dispersion law in n-GaSb can be written as…”

Section: Magnetothermopower In Quantum Dots Of Gallium Antimonidementioning

confidence: 98%

Section: Bismuth Telluridementioning

confidence: 99%

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Thermoelectric Power in Quantum Dots Under Large Magnetic Field

Ghatak

Bhattacharya

2010

Thermoelectric Power in Nanostructured Materials

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“…In this particular case, the scale of the energy is tiny, and it makes little sense to make any claim when such small energy scales are involved. Nevertheless, this example shows that it is indeed possible to describe correctly all spin-orbit effects within a tight-binding framework and, moreover, the effects of a finite C have been observed experimentally for GaSb in hole transport measurements 36,37 . We show below more examples (see, for example, Sec.…”

Section: Zinc Blendes With Effective Bond Orbitalsmentioning

confidence: 99%

Higher-order contributions to Rashba and Dresselhaus effects

et al. 2006

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We have developed a method to systematically compute the form of Rashba-and Dresselhaus-like contributions to the spin Hamiltonian of heterostructures to an arbitrary order in the wavevector k. This is achieved by using the double group representations to construct general symmetryallowed Hamiltonians with full spin-orbit effects within the tight-binding formalism. We have computed full-zone spin Hamiltonians for [001]-, [110]-and [111]-grown zinc blende heterostructures (D 2d , C4v, C2v, C3v point group symmetries), which are commonly used in spintronics. After an expansion of the Hamiltonian up to third order in k, we are able to obtain additional terms not found previously. The present method also provides the matrix elements for bulk zinc blendes (T d ) in the anion/cation and effective bond orbital model (EBOM) basis sets with full spin-orbit effects.

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“…If such a model is not used, single magnetic field Hall effect measurements provide only a weighted average of the concentration and mobility of the light and heavy holes. 4,31,32 A critical component of the two valence band model is the calculation of the separate heavy and light hole concentrations. In this work, parabolic heavy hole and light hole valence bands were assumed.…”

Section: A Electrical Measurementsmentioning

confidence: 99%

Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

WS¹

2007

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Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by ≈20% to ≈65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

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Hole transport properties in gallium antimonide from 77 to 300°K

Cited by 24 publications

References 17 publications

Thermoelectric Power in Quantum Dots Under Large Magnetic Field

Thermoelectric Power in Quantum Dots Under Large Magnetic Field

Higher-order contributions to Rashba and Dresselhaus effects

Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

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