Hole transport in single crystal synthetic diamond at low temperatures

Majdi, Saman; Kovi, Kiran Kumar; Hammersberg, J.; Isberg, Jan

doi:10.1063/1.4802449

Cited by 15 publications

(15 citation statements)

References 22 publications

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“…This NDM is due to the previously described valley repopulation. Figure 3 shows the measured drift velocity for electrons (and holes, for comparison) at 120 K. It may also be noted from Figure 3 that hole transport behaves very differently from electron transport, and indeed no NDM can be observed for hole transport at any temperature for which we have performed measurements (5-500 K) [19]. This is to be expected.…”

Section: Methodsmentioning

confidence: 59%

“…The ToF technique can also be used to measure carrier lifetimes [6,17] and to extract the electric field distribution in particle detectors and device structures [18]. Our group has used the ToF technique with low-intensity pulsed UV excitation to study charge transport in single-crystalline CVD diamond over a wide range of temperatures (5-500 K) [9,13,19]. At temperatures above 150 K, the drift velocities of holes and electrons exhibit a similar behaviour as functions of the applied electric field [9].…”

Section: Introductionmentioning

confidence: 99%

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Charge Transport Phenomena Unique to Diamond

et al. 2014

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Diamond is a unique material in many respects. One of the most well-known extreme properties of diamond is its ultrahardness. This property of diamond actually turns out to have interesting consequences for charge transport, in particular at low temperatures. In fact, the strong covalent bonds that give rise to the ultrahardness results in a lack of short wavelength lattice vibrations which has a strong impact on both electron and hole scattering. In some sense diamond behaves more like a vacuum than other semiconductor materials. In this paper we describe some interesting charge transport properties of diamond and discuss possible novel electronic applications.

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Section: Methodsmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 99%

Charge Transport Phenomena Unique to Diamond

et al. 2014

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“…Recently, similar measurements were performed at lower temperatures under photo‐injection by Majdi et al. () or under alpha‐particle injection by Jansen et al. ().…”

Section: Previous Reports On Charge‐carrier and Exciton Transportmentioning

confidence: 60%

Excitons and fundamental transport properties of diamond under photo‐injection

Naka

Morimoto

Akimoto

2016

Physica Status Solidi (a)

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Abstractauthoren Exciton diffusivity and carrier mobility are key features in determining transport properties of a material. The optimum values required for high‐performance devices are expected to be realized in undoped intrinsic materials. Diamond, one of the emergent high‐mobility materials, has a wide band gap suited for use in power electronics and optoelectronics. For many years, however, mobility measurement for diamond has been limited by carrier freezing at deep impurity levels. Recently, attempts at utilizing photoexcited carriers in undoped diamond have been made in a wide temperature range and various excitation schemes. A series of investigations demonstrated a wealth of intriguing observations such as dominant role of excitons and emergence of low‐temperature anomaly in momentum relaxation. This article highlights recent experimental advances and progresses in understanding transport properties of photoexcited intrinsic diamond.

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“…Recently, measurements of time-of-flight (TOF) transport [2,10,17,18] and optical transient grating [19,20] have been performed with the highly pure crystals. However, the measured carrier mobility varied from sample to sample depending on the surface termination condition, the crystal supplier, and experimental conditions.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic Carrier Parameters and Optical Carrier Injection Method in High-Purity Diamonds

Akimoto¹,

Naka²

2020

Some Aspects of Diamonds in Scientific Research and High Technology

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Diamond attracts increasing attentions as a semiconductor, since high-purity synthesized diamonds have become commercially available in these decades. For appropriate design of any devices, the basic carrier transport parameters should be known. However, it has been difficult to determine carrier parameters in diamond, because the controlled doping and Ohmic contact formation have been hard to achieve. In this chapter, a modern experimental method to measure basic carrier parameters, such as the effective mass, scattering times, and mobility of intrinsic diamonds, is introduced. The method, i.e., nanosecond time-resolved cyclotron resonance (TRCR), is applicable to optically injected carriers in intrinsic diamonds without wire connection. Following the key technique of optical carrier injection, detailed analysis methods for the cyclotron resonance spectra are introduced. The extracted basic parameters of diamond are summarized in comparison to those of silicon and germanium in the same group-IV semiconductor family. This is worthy for triggering further ideas in application-oriented researches using widespread materials.

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Hole transport in single crystal synthetic diamond at low temperatures

Cited by 15 publications

References 22 publications

Charge Transport Phenomena Unique to Diamond

Charge Transport Phenomena Unique to Diamond

Excitons and fundamental transport properties of diamond under photo‐injection

Intrinsic Carrier Parameters and Optical Carrier Injection Method in High-Purity Diamonds

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