Hole Transport in  p-Type ZnO

Makino, T.; Tsukazaki, Atsushi; Ohtomo, Akira; Kawasaki, Masashi; Koinuma, Hideomi

doi:10.1143/jjap.45.6346

Cited by 23 publications

(7 citation statements)

References 53 publications

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“…Acoustic phonon scattering is reported to be the dominant scattering mechanism for e.g. p-type ZnO from T = 10 -300 K [19]. The acoustic phonon scattering can generally be counteracted by decreasing the temperature, varying the carrier density and modifying the phonon modes.…”

Section: -Acoustic Phonon Scatteringmentioning

confidence: 99%

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Electron mobility in oxide heterostructures

Trier

Christensen²,

Pryds³

2018

J. Phys. D: Appl. Phys.

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Section: -Acoustic Phonon Scatteringmentioning

confidence: 99%

“…Here, the different scatting contributions in ZnO are: acoustic (dp) and optical phonons (npop), polar optical phonon (pop), piezoelectric deformations (pe). The figure is adapted from reference [19]. Copyright 2006 The Japan Society of Applied Physics.…”

Section: -Carrier Mobility In Bulk Znomentioning

confidence: 99%

Electron mobility in oxide heterostructures

Trier

Christensen²,

Pryds³

2018

J. Phys. D: Appl. Phys.

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“…In ZnO, the highest LO phonon energy is ħω LO = 72 meV, which gives T po = 72/0.086 = 837 K. This value is far two large for temperature ranges in a typical transport measurement, as has concerned other groups (Makino, 2006). In this work, we choose the Polaron masses, instead of rigid-lattice masses, are used in Eqs.…”

Section: Intrinsic Hall R Factor and Intrinsic Mobility In Znomentioning

confidence: 99%

Electrical and optical properties of zinc oxide for scintillator applications

Yang¹

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Zinc oxide (ZnO) is a wide-band-gap semiconductor suitable for many optical and optoelectronic applications. Among these is to use single crystal, powder, or ceramic forms of ZnO as a fast UV scintillator. In this work, the electrical and optical properties of ZnO were studied using photoluminescence, X-ray-induced luminescence, optical absorption, and Hall Effect techniques. This study included single crystal ZnO and ZnO:Ga samples grown from high-pressure-melt (HPM), seeded chemical-vapor-transport (SCVT), and hydrothermal (HYD) techniques; powder samples synthesized using both solution and solid-state processes, and purchased from different commercial sources; and ceramic samples prepared by hot-uniaxial-pressing and spark-plasma-sintering methods. Temperature-dependent PL and Hall measurements were combined to establish the luminescence origins in the n-type ZnO and ZnO:Ga single crystals. Based on a PL line-shape analysis, including band-gap renormalization, the direct (e,h) transition is the main luminescent channel in highly n-type ZnO:Ga, while FX and FX-LO recombinations are responsible for the UV PL from as-grown ZnO. An intrinsic mobility limit for n-type ZnO was established by including three major phononscattering mechanisms. Analysis of Hall data from single-crystal samples including both neutral-and ionized-impurity scatterings provided donor and acceptor concentrations and energy levels. High n-type single-crystal ZnO samples prepared either by Ga doping and codoping, or by after-growth treatments, were also studied. Absorption and reflectance data were used to obtain free carrier concentrations from the Ga-doped and co-doped crystals, and it was found that several samples with n ~ high-10 18 to low-10 19 cm-3 had optimum UV luminescence. Anneal treatments in reducing atmospheres increased free carrier concentrations in HPM and HYD samples, but an induced absorption band due to oxygen vacancies limited the UV emission from these samples. PL and X-ray-induced luminescence studies on powder ZnO:Ga samples demonstrated that high Ga-doping levels and H-anneal treatments can improve UV emission, while impurities such as Cu and Li enhance the lower energy visible emissions and affect the UV output. For ceramic forms of ZnO, reduction of scattering losses remains as the main challenge for improved scintillation. ACKNOWLEDGMENTS I really couldn't find a right word to express my gratitude to Dr. Nancy Giles, my advisor. I would like to thank her for her support and guidance for my study and research here at her lab, but what I appreciate more is her exemplary dedication to research and teaching. Working with Dr. Giles, I learned not only that I can do research, but I can enjoy it, not only how to focus on the present project, but how to see the whole forest. Each time we talked about science, I benefited from her insightful and inspiring discussions. At times that I experienced personal frustrations, she always encouraged me to chin up again. Thanks are also due to Dr. Larry Halliburton, for his help and e...

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“…The hole concentration was 10 16 -10 17 cm -3 and the mobility was around 8 cm 2 /Vs. This achievement was followed by successful demonstration of pn junction ZnO diodes showing dominant bandedge luminescence [20] as well as detailed understanding of the electrical properties in a p-type ZnO layer [57]. Electroluminescence from p-ZnMgO/n-ZnO heterojunction was reported from Rohm Co. more recently by molecular beam epitaxy (MBE) [58].…”

Section: P-type Doping and Light Emitting Diodesmentioning

confidence: 99%

Ultraviolet optical functions of ZnO and Ga 2 O 3 thin films

Fujita

2008

SPIE Proceedings

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Oxide semiconductors are essentially stable and environmental-friendly materials as well as possessing unique multifunctional properties in conjunction with ultraviolet (UV) to deep UV (DUV) optical functions. Among them ZnO and Ga 2 O 3 , having the bandgaps of about 3.3 and 4.9eV, respectively, are the promising candidates for exploring their UV applications. This paper reports recent advances of ZnO and Ga 2 O 3 semiconductors focusing on their UV to DUV optical functions and device applications. Since ZnO has reached to the actual application stage and future development of the growth with chemical vapor deposition (CVD) is now strongly requested for mass production, here we introduce a novel CVD growth technique, that is, ultrasonic spray assisted CVD, allowing safe and low-cost growth of high quality ZnO-based films. Homoepitaxy on ZnO substrates resulted in step-flow growth, which has hardly been achieved by metalorganic CVD. Ga 2 O 3 is expected for its DUV functions being supported by the availability of Ga 2 O 3 bulk substrates. We show the potential applications of Ga 2 O 3 substrates for highly sensitive DUV photodetectors as well as homoepitaxial step-flow growth of Ga 2 O 3 thin films by molecular beam epitaxy.

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Hole Transport in p-Type ZnO

Cited by 23 publications

References 53 publications

Electron mobility in oxide heterostructures

Electron mobility in oxide heterostructures

Electrical and optical properties of zinc oxide for scintillator applications

Ultraviolet optical functions of ZnO and Ga 2 O 3 thin films

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