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2022
DOI: 10.1103/physrevapplied.18.044038
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Hole Spin Qubits in Thin Curved Quantum Wells

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Cited by 12 publications
(9 citation statements)
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“…We compare our analytical results for Ge NWs to numerical calculations of gate-defined one-dimensional channels in a planar heterostructure [25,28] and curved Ge quantum wells (CQW) [31]. Gate-defined channels exhibit a smaller g factor and weaker SOI than in core/shell NWs, but with a similar qualitative behavior of the effective parameters against electric field and strain.…”
Section: Introductionmentioning
confidence: 93%
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“…We compare our analytical results for Ge NWs to numerical calculations of gate-defined one-dimensional channels in a planar heterostructure [25,28] and curved Ge quantum wells (CQW) [31]. Gate-defined channels exhibit a smaller g factor and weaker SOI than in core/shell NWs, but with a similar qualitative behavior of the effective parameters against electric field and strain.…”
Section: Introductionmentioning
confidence: 93%
“…( 7)], the CQW is also subject to a radial strain that resembles the strain in planar heterostructures. Explicitly, the total BP Hamiltonian of CQWs is well approximated by [31]…”
Section: Model Of Nanowirementioning
confidence: 99%
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