Hole Spin Qubits in 
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 FinFETs With Fully Tunable Spin-Orbit Coupling and Sweet Spots for Charge Noise

Bosco, Stefano; Hetényi, Bence; Loss, Daniel

doi:10.1103/prxquantum.2.010348

Cited by 78 publications

(72 citation statements)

References 78 publications

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“…Second, the sweet spot appears within a larger range of the electric fields and for any orientation of the magnetic field. Since we found similar sweet spots for [011] growth direction (plots not shown), we conjecture that sweet spots in lateral spin hole qubits are generic [16,41].…”

supporting

confidence: 55%

“…The latter effect, so far a major obstacle for spin qubits in GaAs, can be further suppressed using holes instead of electrons [9][10][11][12]. Holes also offer stronger spin-orbit coupling [13][14][15][16], essential for electric spin control without micromagnets or on-chip ESR lines [17]. Taken together, the reduced susceptibility to nuclear noise [18], the absence of valley degeneracy, and fully-electric control make holes in silicon a very attractive platform for scalable spin qubits.…”

mentioning

confidence: 99%

“…Our work leaves space for interesting extensions. For example, the dependence on the device geometry prompts the question of how the additional spin-orbit interactions impact spin dephasing in other devices, such as nanowire-based hole-spin qubits [37] or FinFETs [16].…”

mentioning

confidence: 99%

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Charge-noise induced dephasing in silicon hole-spin qubits

Malkoc,

Stano,

Loss

2022

Preprint

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We investigate theoretically charge-noise induced spin dephasing of a hole confined in a quasi-twodimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet-spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet-spots is boosted by several orders of magnitude, up to order of milliseconds.

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supporting

confidence: 55%

mentioning

confidence: 99%

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Charge-noise induced dephasing in silicon hole-spin qubits

Malkoc,

Stano,

Loss

2022

Preprint

Self Cite

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“…Minimizing the effects of charge noise is critical for hole-spin qubits since the coherence time T * 2 of hole spins in group IV quantum dots is primarily limited by electrical noise [14,53]. Furthermore, recent theoretical work shows that it is possible to engineer sweet spots where the dominant charge dephasing mechanism is suppressed while still allowing high-speed electrical qubit control [54][55][56].…”

Section: B Electrical Modulation Of the N = 1 Hole G Factormentioning

confidence: 99%

Electrical control of the g tensor of the first hole in a silicon MOS quantum dot

et al. 2021

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Single holes confined in semiconductor quantum dots are a promising platform for spin-qubit technology, due to the electrical tunability of the g factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole-spin states. Here, we study the underlying hole-spin physics of the first hole in a silicon planar metal-oxide-semiconductor (MOS) quantum dot. We show that nonuniform electrode-induced strain produces nanometer-scale variations in the heavy-hole-light-hole (HH-LH) splitting. Importantly, we find that this nonuniform strain causes the HH-LH splitting to vary by up to 50% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the nonuniform strain profile, allowing a mechanism for electric modulation of the hole g tensor. Using this mechanism, we demonstrate tuning of the hole g factor by up to 500%. In addition, we observe a potential sweet spot where dg (110) /dV = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a technology involving engineering of nonuniform strains to optimize spin-based devices.

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“…[ 21–28 ] Besides the electron system, a hole spin qubit in silicon or germanium is also under intensive study recently due to high mobility, suppressed coupling to nuclear noise, fast EDSR, and ease of fabrication. [ 28,107–134 ]…”

Section: Introductionmentioning

confidence: 99%

Dephasing of Exchange‐Coupled Spins in Quantum Dots for Quantum Computing

Huang

2021

Adv Quantum Tech

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A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin states encode either a singlet–triplet qubit or two single‐spin qubits coupled by exchange interaction. In this article, progress on the spin dephasing of two exchange‐coupled spins in a double quantum dot is reported. First, the schemes of two‐qubit gates and qubit encodings in gate‐defined quantum dots or donor atoms based on the exchange interaction are discussed. Then, the progress on spin dephasing of a singlet–triplet qubit or a two‐qubit gate is reported. The methods of suppressing spin dephasing are further discussed. The understanding of the spin dephasing may provide insights into the realization of high‐fidelity quantum gates for spin‐based quantum computing.

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Hole Spin Qubits in Si FinFETs With Fully Tunable Spin-Orbit Coupling and Sweet Spots for Charge Noise

Cited by 78 publications

References 78 publications

Charge-noise induced dephasing in silicon hole-spin qubits

Charge-noise induced dephasing in silicon hole-spin qubits

Electrical control of the g tensor of the first hole in a silicon MOS quantum dot

Dephasing of Exchange‐Coupled Spins in Quantum Dots for Quantum Computing

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