Hole spin polarization in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi><mml:mi mathvariant="normal">As</mml:mi><mml:mo>:</mml:mo><mml:mi mathvariant="normal">Mn</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Al</mml:mi><mml:mi mathvariant="normal">As</mml:mi></mml:mrow></mml:math>multiple quantum wells

Sapega, V. F.; Brandt, O.; Ramsteiner, M.; Panaĭotti, I. E.; Аверкиев, Н. С.

doi:10.1103/physrevb.75.113310

Cited by 16 publications

(8 citation statements)

References 12 publications

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“…A saturation of M z takes place at B 0 ¼ 2K=M s $ 0:2À0:5 T, which agrees with literature data [29]. A similar fast saturation at low B was observed for P c ðBÞ of a hot PL in the FM epilayers and digital Mn/ GaAs FM structures, where P c ðBÞ is directly related to the hole spin polarization [3,5]. Further increase of P c ðBÞ and DEðBÞ at higher B results from the contribution of the QW band g-factor.…”

Section: Resultssupporting

confidence: 90%

“…The feasibility of integrating ferromagnetic (FM) properties into semiconductors has resulted in a considerable interest in these materials and their heterostructures [2,3]. Despite the FM microscopic mechanism in (Ga,Mn)As still being under discussion, at present it is convincingly shown that the holes in the impurity band play the determining role in formation of the FM state [4][5][6].…”

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confidence: 99%

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Circularly polarized photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ‐layer in the barrier

Zaı̆tsev

Звонков²

2010

Physica Status Solidi (b)

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The photoluminescence (PL) of insulating heterostructures containing an InGaAs/GaAs quantum well (QW) and a tunneling close ferromagnetic (FM) Mn d-layer in the GaAs barrier has been investigated in detail. We found that a slow increase of a circular polarization degree and a Zeeman splitting of the QW emission band at high, normal to the QW plane, magnetic field B > 1 T, characteristic of non-magnetic QWs, is preceded at low temperatures by a much faster increase at B < 1 T. The fast increase slows down with increasing temperature and disappears above a Curie temperature of the Mn d-layer, which evidences effective p-d exchange interaction of the QW holes with Mn ions in the FM d-layer.

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Section: Resultssupporting

confidence: 90%

mentioning

confidence: 99%

Circularly polarized photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ‐layer in the barrier

Zaı̆tsev

Звонков²

2010

Physica Status Solidi (b)

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“…Figure 6(b) also shows the data of the sample R. It seems that confinement in the NWs reduces the PL polarization. 24 It should be taken into account that we have studied the magneto-optical properties of the sample with (Ga,Mn)As NWs. As TEM investigation has shown, there was segregation of MnAs precipitates at the sample surface.…”

Section: à3mentioning

confidence: 99%

“…In contrast to the SQUID data PL polarization of the NW sample shows rather paramagnetic behavior in an applied magnetic field ( Figure 6(b)). This means that the density of Mn acceptors is not too high, resulting in weak coupling between neighboring Mn acceptors 24 or that the signal is obtained not only from (Ga,Mn)As NWs themselves, but also from the layer between them. In order to disjoint the contribution of different parts, the NWs were peeled off from the host substrate and deposited onto a Si substrate using the procedure described above.…”

Section: à3mentioning

confidence: 99%

Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

Bouravleuv

Cirlin

Sapega³

et al. 2013

Journal of Applied Physics

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(Ga,Mn)As nanowires were grown by molecular beam epitaxy using Mn as a growth catalyst on GaAs(001) substrates at 485 °C, i.e., at intermediate temperatures higher than ones used for the growth of (Ga,Mn)As thin films, but lower than the ordinary temperatures of Au-assisted growth of GaAs nanowires. (Ga,Mn)As nanowires obtained with typical lengths between 0.8 and 4 μm and diameters 50–90 nm do not have defects, such as dislocations or precipitates, except for the stacking faults lying parallel to the growth direction. The investigation of magnetic and optical properties has been carried out not only for as-grown samples with nanowires but also for peeled off nanowires from the host substrate. The results obtained demonstrate that (Ga,Mn)As nanowires exhibit ferromagnetic ordering around 70 K.

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“…30 The coupling constants of the twospin model are obtained from those of the four-spin model by representing Eqs. ͑6͒ and ͑12͒ in the basis set of the F =1 states from Eq.…”

Section: Two-spin Modelmentioning

confidence: 99%

Single-exciton spectroscopy of single Mn doped InAs quantum dots

2008

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The optical spectroscopy of a single InAs quantum dot doped with a single Mn atom is studied using a model Hamiltonian that includes the exchange interactions between the spins of the quantum dot electron-hole pair, the Mn atom, and the acceptor hole. Our model permits linking the photoluminescence spectra to the Mn spin states after photon emission. We focus on the relation between the charge state of the Mn, A 0 or A − , and the different spectra which result through either band-to-band or band-to-acceptor transitions. We consider both neutral and negatively charged dots. Our model is able to account for recent experimental results on single Mn doped InAs photoluminescence spectra and can be used to account for future experiments in GaAs quantum dots. Similarities and differences with the case of single Mn doped CdTe quantum dots are discussed.

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Hole spin polarization inGaAs:Mn∕AlAsmultiple quantum wells

Cited by 16 publications

References 12 publications

Circularly polarized photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ‐layer in the barrier

Circularly polarized photoluminescence of insulating InGaAs/GaAs heterostructures with a ferromagnetic Mn δ‐layer in the barrier

Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

Single-exciton spectroscopy of single Mn doped InAs quantum dots

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