Hole doping at Sn sublattice of the buckled honeycomb SnX (X = S and Se) monolayer: an efficient functionalization approach
D. M. Hoat,
J. Guerrero-Sanchez
Abstract:In this work, the hole doping at Sn sublattice is explored to induce feature-rich electronic and magnetic properties in SnX (X = S and Se) monolayers. In the buckled honeycomb...
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