Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, Usha

doi:10.1007/s11051-016-3681-x

Cited by 7 publications

(9 citation statements)

References 27 publications

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“…To our knowledge, this on-state hole current is the highest value ever reported for InSb NWFETs. 7,17,19 Figure 4b shows the measured offstate current of the short channel device measured at VD=10 mV in comparison to the offstate current of the long channel device. It is seen that the off-state current of the short channel device is about three orders of magnitude higher than the off-state current of the long channel device.…”

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confidence: 99%

“…Hence, we determine the bandgap as Eg = 2ΦB,MAX = ~190 meV. We can also extract the energy bandgap in the NW from the activation energy of the carriers determined from the temperature dependent measurements of off-state current Ioff at a small source-drain bias voltage7 according to Ioff ~− 2 .Figure 2(c)shows the plot of the off-state current Ioff (in logarithmic scale) measured as a function of 1/2kT at VD=10 mV. Here, a good straight line fit to the data is obtained, see the solid line inFigure 2(c).…”

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Ambipolar transport in narrow bandgap semiconductor InSb nanowires

et al. 2020

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We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by a resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1-µm-long device made from a nanowire of 50 nm in diameter, we extract a bandgap energy of 190-220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260-nm-long device is found to exhibit a finite off-state current and a hole, on-state, circumferencenormalized current of 11 µA/µm at VD = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron-hole quantum systems and hole based spin qubits.

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confidence: 99%

Ambipolar transport in narrow bandgap semiconductor InSb nanowires

et al. 2020

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“…The composition of the prepared InSb is conrmed by EDS spectrum. 30,31 Typical HRTEM images of the InSb samples are shown in Fig. 3a and b.…”

Section: Structural and Morphological Analysismentioning

confidence: 99%

“…44 Optical absorption of InSb QDs shi towards near-infrared thereby signicantly enhance current density by reducing UV absorption loss which occurs during light absorption and thus favouring conduction process under light illumination. [12][13][14]23,31,42 3.4 Photoanode characterization 3.4.1 Structural and morphological analysis of TiO 2 /CdS/ InSb photoanodes. Fig.…”

Section: Xps Analysismentioning

confidence: 99%

“…Hitherto InSb QDs and its applications are scarcely ever considered as they are highly reactive towards air and moisture due to co-valent nature of group III-V elements. [29][30][31][32] Most of works reported on in situ growth and deposition of InSb thin lms. [33][34][35][36] Only few works have been reported on the synthesis of InSb QDs.…”

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Effect of co-sensitization of InSb quantum dots on enhancing the photoconversion efficiency of CdS based quantum dot sensitized solar cells

et al. 2020

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Van der Waals Epitaxial Growth of Ultrathin Indium Antimonide on Arbitrary Substrates through Low‐Thermal Budget

Xiong,

Wen,

Wang

et al. 2024

Advanced Materials

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III–V semiconductors possess high mobility, high frequency response, and detection sensitivity, making them potentially attractive for beyond‐silicon electronics applications. However, the traditional heteroepitaxy of III–V semiconductors is impeded by a significant lattice mismatch and the necessity for extreme vacuum and high temperature conditions due to the low saturated vapor pressures of their constituent metals, thereby impeding their in situ compatibility with flexible substrates and silicon‐based circuits. In this study, we present a novel approach to fabricate ultrathin InSb single‐crystal nanosheets on arbitrary substrates with a thickness as thin as 2.4 nm using low‐thermal‐budget Van der Waals (vdW) epitaxy through chemical vapor deposition (CVD). In particular, we have successfully achieved in‐situ growth on both silicon‐based substrates and flexible polyimide substrates. Notably, the growth temperature required for InSb nanosheets (240 °C) is significantly lower than that employed in back‐end‐of‐line processes (400 °C). The field effect transistor (FET) devices based on fabricated ultrathin InSb nanosheets exhibit ultra‐high On‐off ratio exceeding 108 and demonstrate minimal gate leakage currents. Furthermore, these ultrathin InSb nanosheet display p‐type characteristics with hole mobilities reaching up to 203 cm2v−1s−1 at room temperatures. This study paves the way for achieving heterogeneous integration of III–V semiconductors, ensuring compatibility with existing integrated circuit architecture and facilitating their application in flexible electronics, thereby realizing the potential of III–V nanometer‐scale logic transistors.This article is protected by copyright. All rights reserved

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Hole-dominated transport in InSb nanowires grown on high-quality InSb films

Cited by 7 publications

References 27 publications

Ambipolar transport in narrow bandgap semiconductor InSb nanowires

Ambipolar transport in narrow bandgap semiconductor InSb nanowires

Effect of co-sensitization of InSb quantum dots on enhancing the photoconversion efficiency of CdS based quantum dot sensitized solar cells

Van der Waals Epitaxial Growth of Ultrathin Indium Antimonide on Arbitrary Substrates through Low‐Thermal Budget

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