Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

Chang, Hao‐Yu; Akita, Shingo; Matsukura, F.; Ohno, Hideo

doi:10.1063/1.4823592

Cited by 8 publications

(6 citation statements)

References 27 publications

(45 reference statements)

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“…However, a much higher value, γ 1, was observed for MIS structures of (Ga,Mn)Sb, as shown in Fig. 44(a) (Hsiao Wen Chang et al, 2013). According to theoretical evaluations from Eq.…”

Section: Curie Temperatures In (Gamn)as and Related Systemsmentioning

confidence: 92%

“…Although there have only been limited success on (Ga,Mn)As (Nazmul et al, 2004), recent progress in low-temperature deposition of high-quality gate oxides by atomic layer deposition made it possible to observe electrical modulation of ferromagnetism in (Ga,Mn)As (Chiba et al, 2006a(Chiba et al, , 2010Sawicki et al, 2010), (Ga,Mn)Sb (Hsiao Wen Chang et al, 2013), and (Ge,Mn) (Xiu et al, 2010). For such oxides, the gate-induced changes in the areal carrier density reach 3 × 10 13 cm −2 , which for a typical value of the Thomas-Fermi screening length would result in the amplitude of the hole variation about 3 × 10 20 cm −3 , and the correspondingly high modulation of T C .…”

Section: Manipulation By An Electric Fieldmentioning

confidence: 99%

“…online) (a) Curie temperatures TC for various surface densities of holes ps changed by gate voltage in Ga1−xMnx)As and Ga1−xMnxSb channels of the thickness t = 5 nm. The values of γ = d ln TC/d ln ns are also shown (from Hsiao WenChang et al, 2013). (b) Computed values of γ as a function of the position of the Fermi level at the surface in respect to the valence band top for Mn acceptor concentration 2 × 10 20 cm −3 and band structure parameters of GaAs; the Fermi energy is known to be pinned by surface states in the band gap of GaAs and in the valence band of GaSb (fromOhno, 2013).…”

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confidence: 99%

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Dilute ferromagnetic semiconductors: Physics and spintronic structures

2014

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This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mncontaining III-V as well as II-VI, IV-VI, V 2 -VI 3 , I-II-V, and elemental group IV semiconductors are described paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.

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“…However, a much higher value, γ 1, was observed for MIS structures of (Ga,Mn)Sb, as shown in Fig. 44(a) (Hsiao Wen Chang et al, 2013). According to theoretical evaluations from Eq.…”

Section: Curie Temperatures In (Gamn)as and Related Systemsmentioning

confidence: 92%

Section: Manipulation By An Electric Fieldmentioning

confidence: 99%

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confidence: 99%

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Dilute ferromagnetic semiconductors: Physics and spintronic structures

2014

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“…21). Note that the model also describes the chemical trend of T C ; the different hole concentration dependence for arsenides and antimonides 25 . Investigations into the electricfield effect on magnetism have expanded to cover a wide range of magnetic semiconductors, including group II-VI (refs 26-28), group III-V (refs 20,21,25,29) and group IV (ref.…”

Section: Electrical Manipulation Of Magnetism In Ferromagnetsmentioning

confidence: 98%

Control of magnetism by electric fields

2015

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The electrical manipulation of magnetism and magnetic properties has been achieved across a number of different material systems. For example, applying an electric field to a ferromagnetic material through an insulator alters its charge-carrier population. In the case of thin films of ferromagnetic semiconductors, this change in carrier density in turn affects the magnetic exchange interaction and magnetic anisotropy; in ferromagnetic metals, it instead changes the Fermi level position at the interface that governs the magnetic anisotropy of the metal. In multiferroics, an applied electric field couples with the magnetization through electrical polarization. This Review summarizes the experimental progress made in the electrical manipulation of magnetization in such materials, discusses our current understanding of the mechanisms, and finally presents the future prospects of the field.

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“…[1,65], studies have obtained the Curie temperature near 400 K when they used x = 20%; and in refs. [2,15,61,65,66,75], studies have found the Curie temperature of (Ga, Fe)Sb at 340 K when x = 25%. But the maximum Curie temperature of an n-type (Ga,Fe)Sb ferromagnetic diluted semiconductor is 230 K, as shown in Ref.…”

Section: Resultsmentioning

confidence: 99%

Computational investigation of high Curie temperature in a new N‐type ferromagnetic diluted magnetic semiconductors, especially iron‐doped on GaSb

Mekuye,

Atnafu,

Yibeltal

et al. 2024

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Diluted magnetic semiconductors have become a research area in the past few years due to the importance of new technology, spintronics devices, and green technology to withstand rising global temperatures. Both n‐type and p‐type diluted magnetic semiconductors are used in pairs for perfect performance, especially for p‐n junction diodes, the p‐d Zener model, GMR, and TMR spintronics devices. The main challenge for some researchers is to find a ferromagnetic diluted magnetic semiconductor with a Curie temperature greater than room temperature for both n‐type and p‐type ferromagnetic diluted semiconductors, but this study has solved this problem. In the present study, the ferromagnetic properties of an n‐type gallium iron antimonide diluted semiconductor have been studied using the Hamiltonian model without applying an external magnetic field, electric field, or chemical potential. We have formulated a Hamiltonian model in the system, considering the application of the green formalism function and the transformation of Holstein–Primakaff. The Curie temperature, dispersion, number of magnons, reduced magnetization, and specific heat capacity of ferromagnetic magnons of the n‐type (Ga, Fe)Sb formula are formulated. The Curie temperature versus concentration graph is plotted, and the specific heat capacity and magnetization versus temperature graphs are plotted. In this study, a surprising situation is that the Curie temperature of n‐type diluted magnetic semiconductor is investigated above room temperature, which is 330.4 K. The ferromagnetic properties of appear up to 330.4 K, which is able to play a major role in spintronic and next‐generation green nanotechnology devices.

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Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure

Cited by 8 publications

References 27 publications

Dilute ferromagnetic semiconductors: Physics and spintronic structures

Dilute ferromagnetic semiconductors: Physics and spintronic structures

Control of magnetism by electric fields

Computational investigation of high Curie temperature in a new N‐type ferromagnetic diluted magnetic semiconductors, especially iron‐doped on GaSb

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