HMDSO plasma polymerization and thin film optical properties

Mota, Ronaldo; Galvão, Douglas S.; Durrant, Steven F.; Moraes, Márcio de; Dantas, Socrates de Oliveira; Cantão, Maurício Pereira

doi:10.1016/0040-6090(95)06938-0

Cited by 59 publications

(43 citation statements)

References 10 publications

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“…% (see Table 1), which is close to that of around 1.70 analyzed for the silicon carbonitride produced by ion beam sputtering with a silicon content below 25 % as reported by Wu et al [14] . By comparison, plasma-polymerized SiO 2 :H:C films derived from hexamethyldisiloxane (HMDSO) possess a range of refractive index from 1.45 to 1.55 [15] with higher porosity leading to a reduction of the refractive index [16] . Our analyzed value of the refractive index for the SiCNO:H films studied in this work ranges between 1.51 and 1.64 and coincides with the data reported in the literature for SiCN and SiCO [14,15] .…”

Section: Resultsmentioning

confidence: 99%

“…By comparison, plasma-polymerized SiO 2 :H:C films derived from hexamethyldisiloxane (HMDSO) possess a range of refractive index from 1.45 to 1.55 [15] with higher porosity leading to a reduction of the refractive index [16] . Our analyzed value of the refractive index for the SiCNO:H films studied in this work ranges between 1.51 and 1.64 and coincides with the data reported in the literature for SiCN and SiCO [14,15] . Furthermore, the refractive index values of the most frequently studied PECVD materials related to SiCNO:H are summarized in Table 2.…”

Section: Resultsmentioning

confidence: 99%

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Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film

Zhou

Yan

Kroke³

et al. 2006

Materialwissenschaft Werkst

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Dedicated to Dr. E. Broszeit on the occasion of his 65 th birthday.Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma-assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio-frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si-N bonds, and disfavoured the formation of N=C=N, Si-NCN, C-H and Si-CH 3 bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiC-NO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 lm x 5 lm area. Moreover, the films contained 8 16 at.% oxygen bonded to Si, which originated from the remnant H 2 O in the deposition chamber. Keywords: Amorphous SiCNO:H; RF-PACVD; Structure, Optical Properties. Amorphe Si-CNO:H-Schichten wurden durch plasmaunterstützte chemische Gasphasenabscheidung (PACVD) unter Anwendung von bis(trimethylsilyl)carbodiimid (BTSC) als Einkomponentenvorstufe in einem Radiofrequenz-Plasma unter Argon (Ar) abgeschieden. In der vorliegenden Arbeit wurden die bei unterschiedlichen Temperaturen abgeschiedenen SiCNO:H-Schichten unter Berücksichtigung der Abscheidungsrate, des Brechungsindexes, der Oberflächenrauheit, der Mikrostruktur und der chemischen Zusammensetzung einschließlich des Bindungszustandes untersucht. Die Ergebnisse zeigten, dass eine höhere Abscheidungstemperatur die Bildung von Si-N-Bindungen begünstigte, während die Bildung von N=C=N-, Si-NCN-, CH-und Si-CH 3 -Bindungen der daraus resultierenden SiCNO:H-Schicht reduziert wurde. Eine höhere Abscheidungstemperatur reduzierte die Abscheidungsrate und erhöhte den Brechungsindex der SiCNO:H-Schichten. Mit steigender Temperatur bildete sich eine dichtere Schicht, was auf eine Ä nderung des Abscheidungsmechanismus hinweist. Die im unteren Temperaturbereich erfolgende Partikelabscheidung ging mit zunehmender Temperatur über in eine durch heterogene Oberflächenreaktion erfolgende Abscheidung. Mit Ausnahme der bei Raumtemperatur durchgeführten Beschichtung bildete sich eine glatte Oberflächen-schicht mit einer Rauheit in der Mitte von rund 4 nm im Bereich von 5 lm x 5 lm. Darüber hinaus enthielten die Schichten 8 16 at.% an Si-gebundenem Sauerstoff.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film

Zhou

Yan

Kroke³

et al. 2006

Materialwissenschaft Werkst

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“…Absorption at 990 cm -1 corresponds to the stretching modes of Si-CH 3 bonds [10]. Absorptions at 1200-1000 cm -1 correspond to the Si-O-Si and Si-O-C bonds [11]. From Figure1, a decrease in the phosphorus and carbon contents with the increase of the discharge power is observed.…”

Section: Infra-red Absorption Measurementsmentioning

confidence: 87%

Effect of plasma power on properties of a‐SiC:H films deposited by DC magnetron sputtering

Brighet

Mokkadem

Fedala

et al. 2010

Phys. Status Solidi (c)

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The effect of plasma discharge power on the properties of a‐SiC:H thin films deposited by DC magnetron sputtering from the use of a liquid source based on hydrocarbon (triméthylphosphine: TMP, (P(CH3)3) are presented. The liquid source based of trimethylphosphine is introduced into the deposit chamber by using hydrogen as carrying gas. The samples were characterized by optical transmission, infrared absorption (FT‐IR) and electrical conductivity measurements. Optical transmission showed that the increase of the plasma discharge power induced a decrease in optical gap energy value accompanied by an increase of refractive index due to a reduction of Si‐H bonds and the carbon film content. Infra‐red absorption measurements clearly evidenced the appearance of additional bands relating to the constituent elements of the TMP (H, C, P). In the same way, a reduction in the phosphorus and carbon contents with the increase of the discharge power is observed. The electrical conductivity measurements have revealed a change of electrical properties of a‐Si:H(P) layers and the doping efficiency with the plasma power. They also clearly evidenced carbon incorporation in a‐Si:H matrix which limits the phosphorus doping effectiveness. The effect of the annealing temperature on the electric photoconductivity of material was also studied. We clearly evidenced that the a‐SiC:H(P) films are photoconductive with an improvement after a thermal annealing in the range of 130–250 °C correlated with an activation of the phosphorus atoms in the a‐Si:H matrix. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…An increasing number of these photonics devices are based on organic and plasma polymers materials [7,8]. Indeed, plasma enhanced CVD processes offer a wide range of settings (RF power, gases flow rates, gases mixture ratio, pulsed plasma) to accurately control the growing film characteristics (refractive index, extinction coefficient, thickness, stress) [9,10].…”

Section: Introductionmentioning

confidence: 99%

Integrated optics based on plasma processed dielectric materials

Bégou¹,

Bêche²,

Landesman³

et al. 2008

SPIE Proceedings

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International audienceA first generation of dielectric rib waveguides has been designed and shaped to support a monomode confinement by using organosilicon materials elaborated by plasma enhanced chemical vapor deposition (PECVD). Optical losses have been measured around 5.5dB.cm-1 and 11.5dB.cm-1 for TE00 and TM00 modes, respectively. Then, synthesis of titanium dioxide thin films by PECVD has been investigated to improve optical and propagation properties. The first results on these films exhibit a refractive index around 1.99 at a 633 nm wavelength with a 380 nm optical gap. When an rf bias is applied to the substrate, the refractive index reaches 2.36, from -5V, without significant optical gap variation

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HMDSO plasma polymerization and thin film optical properties

Cited by 59 publications

References 10 publications

Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film

Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film

Effect of plasma power on properties of a‐SiC:H films deposited by DC magnetron sputtering

Integrated optics based on plasma processed dielectric materials

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