HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

BSIM6: Analog and RF Compact Model for Bulk MOSFET

“…These models excelled in accuracy through many generations Manuscript of technology from 350 to 28 nm [2]. While BSIM3 and BSIM4 are threshold-based models, there also exist different class of models based on surface potential approach [3], [4] and charge-based approach [5]. As shown in Fig.…”

Benchmarking of a surface potential based organic thin-film transistor model against C<inf>10</inf>-DNTT high performance test devices

“…The developed model iteratively solves the surface potential at source and drain side after the HiSIM (Hiroshima University STARC IGFET Model) approach [16][17][18]. The model first calculates 0 s φ at the source region end adjacent to the gate electrode in the organic semiconductor layer, then 0 b φ at the backside of the source region end, after that sL φ at the drain region end adjacent to the gate electrode in the organic semiconductor layer, and finally bL φ at the backside of the drain region end.…”

Proposal of a fitting accuracy metric suitable for compact model qualification in all MOSFET operation regions

“…Model I needs to be able to predict accurately characteristics variations for process condition changes. For example, HiSIM2 [1] or the compact model proposed by Sakamoto, et al [2] is qualified for Model I. These compact models have a good predictability of characteristics variations due to process condition change because the models are more physics-oriented than a certain class of compact model (such as a vth-based one) and their major model parameters correspond more directly to device technology such as channel doping profile.…”