Highly transparent and conductive rare earth-doped ZnO thin films prepared by magnetron sputtering

Minami, Tadatsugu; Yamamoto, Takashi; Miyata, Toshihiro

doi:10.1016/s0040-6090(00)00731-8

Cited by 253 publications

(123 citation statements)

References 22 publications

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“…Minami et al 44 have shown evidence that a Sc or Y atom in Sc or Y doped ZnO films, prepared by d.c. magnetron sputtering, effectively acts as a donor when it occupies the Zn site. Based on our calculations, both the Y Zn and the Sc Zn defects induce a singly occupied level in the conduction band, and thus act as single donors, consistent with experiments.…”

Section: B Single Dopants/impuritiesmentioning

confidence: 99%

Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors

et al. 2011

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We perform first-principles density-functional theory calculations to study the atomic and electronic properties of early transition metals (Zr, Ti, Y, and Sc) co-doped with N in wurtzite ZnO. By incorporating early transition metals Ti, Zr, Y and Sc with N into ZnO simultaneously, we find that forming complexes (Zr-2N), (Ti-2N), (Y-N) and (Sc-N) induces fully occupied impurity bands with the N 2p character above the valence band maximum of host ZnO. With further doping of N in ZnO, the systems (Zr-2N):N, (Ti-2N):N, (Y-N):N or (Sc-N):N have acceptor ionization energies lower than that of the isolated N acceptor in ZnO. Under different growth conditions (i.e using N2O or NO source for the nitrogen atoms), we calculate the formation energies of the defect complexes and compare the dopability of the selected co-doped systems. Our results show that the valence band maximum characteristic of ZnO can be altered by compensated donor-acceptor pairs, thus improve the p-type dopability.

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Section: B Single Dopants/impuritiesmentioning

confidence: 99%

Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors

et al. 2011

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“…6 In previous studies, the thermal degradation in polycrystalline AZO films has been simply attributed to oxygen adsorption on the grain boundary surface. 4,7,8 Moreover, a poor understanding of the degradation mechanism has delayed the development of a method to reversibly heal the electrical properties of degraded AZO films. While a significant increase in the resistivity of polycrystalline AZO films by air annealing has been experimentally confirmed and estimated, a systematic investigation of the degradation and recovery mechanisms has yet to be performed.…”

Section: Reversible Change In Electrical and Optical Properties In Epmentioning

confidence: 99%

“…While a significant increase in the resistivity of polycrystalline AZO films by air annealing has been experimentally confirmed and estimated, a systematic investigation of the degradation and recovery mechanisms has yet to be performed. 7 Studenikin et al 9 reported only that electrical properties of undoped polycrystalline ZnO could be changed reversibly through air and hydrogen annealing.…”

Section: Reversible Change In Electrical and Optical Properties In Epmentioning

confidence: 99%

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Noh

Jung

Lee

et al. 2008

Journal of Applied Physics

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Aluminum-doped ZnO ͑AZO͒ films were epitaxially grown on sapphire ͑0001͒ substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01ϫ 10 −4 ⍀ cm. However, after annealing at 450°C in air, the electrical resistivity of the AZO films increased to 1.97ϫ 10 −1 ⍀ cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H 2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H 2 annealing. A photoluminescence study showed that oxygen interstitial ͑O i Ј͒ is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.

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“…The ability to easily tune the conductivity, charge carrier concentration, and optical properties of ZnO films is highly desirable for these applications. Doping by well-suited elements is a way to modify or enhance physical properties or to induce new ones in oxide films [5][6][7][8][9]. In this frame, the best doping of ZnO thin films for both electrical conductivity and optical transparency comparable with those of the indium-tin oxide ( …”

Section: Introductionmentioning

confidence: 99%

Transparent conductive Nd-doped ZnO thin films

Nistor¹,

Millon²,

Cachoncinlle³

et al. 2015

J. Phys. D: Appl. Phys.

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is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. Any correspondence concerning this service should be sent to the repository Administrator : archiveouverte@ensam.eu IntroductionDue to its specific electrical and optical properties (high electrical conductivity and high optical transparency in the visible domain), zinc oxide (ZnO) is a suitable material with applications in a large number of devices and components such as optical waveguides, piezoelectric transducers, transparent conductive electrodes, gas sensors, light emitting diodes, and others [1][2][3][4][5][6]. Moreover, because it is abundant and environmentally friendly, ZnO is an ideal wide bandgap material for applications in photovoltaics (PV). The ability to easily tune the conductivity, charge carrier concentration, and optical properties of ZnO films is highly desirable for these applications. Doping by well-suited elements is a way to modify or enhance physical properties or to induce new ones in oxide films [5][6][7][8][9]. In this frame, the best doping of ZnO thin films for both electrical conductivity and optical transparency comparable with those of the indium-tin oxide ( AbstractTransparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10 −4 Ω cm and 90% optical transmittance in the visible range and different nearinfrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 °C.

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Highly transparent and conductive rare earth-doped ZnO thin films prepared by magnetron sputtering

Cited by 253 publications

References 22 publications

Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors

Design of shallow acceptors in ZnO through early transition metals codoped with N acceptors

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films

Transparent conductive Nd-doped ZnO thin films

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