Highly strained Ge1-xSnx alloy films with high Sn compositions grown by MBE

The growth of Ge and direct bandgap Ge1−xSnx on GaAs (001) by molecular beam epitaxy

“…where a 0 represents the lattice parameter of Ge (a 0 = 0.5658 nm) and a ‖ comes from the calculated in-plane lattice parameter from eqn (2). According to the Ge peak position on the RSM and eqn ( 2) and (3), the Ge layer is compressively strained for all samples with an average of 3 xx = −9.1 ± 0.3 × 10 −4 for Ge/AlAs/ GaAs and 3 xx = −9.3 ± 0.3 × 10 −4 for Ge/GaAs.…”

Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering

“…So far, researchers have successfully prepared Ge 1−x Sn x alloy films using molecular beam epitaxy (MBE) [27][28][29], chemical vapor deposition (CVD) [30][31][32], magnetron sputtering [33][34][35][36] and solid phase crystallization [37,38]. Among these methods, MBE is a method that can accurately control the thickness and structure of thin films.…”

Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure

“…GeSn optoelectronic devices, such as light-emitting diodes [6,7], lasers [8,9], and photodetectors [10][11][12] have been fabricated, indicating the extensive applications of GeSn alloys in silicon-based optoelectronic integration. However, the lowequilibrium solid solubility (<1%) of Sn in Ge, large lattice mismatch (∼14.7%) between Ge and α-Sn, and easy Sn segregation during growth limit the epitaxy of high-Sncontent GeSn alloys with high crystal quality [13,14]. For * Author to whom any correspondence should be addressed.…”

“…Although much effort has been made to grow high-quality and high-Sn-composition GeSn alloys by exploring epitaxy technologies such as chemical vapor deposition (CVD) [16,17], molecular beam epitaxy (MBE) [2,14], and sputtering epitaxy [18][19][20][21][22], relaxed GeSn alloys (Sn content > 10%) with high crystal quality have been reported only by the CVD method [16,17,23]. Other methods, such as thermal annealing after growth [24,25], microdisk [26], and microbridge [27] structures have been investigated to relieve strain.…”