Highly stable write-once-read-many times switching behavior of graphene oxide-polymer nanocomposites

Gogoi, Koustav Kashyap; Chowdhury, Avijit

doi:10.1063/1.5122577

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…GO can be dispersed in a variety of solvents, which permits compatible processes with a wide range of commercially available flexible substrates. With various technologies like spin coating [164][165][166], drop casting [167][168][169], dip coating [170][171][172], and inkjet printing [157,173,174], GO dielectric layers can be deposited onto flexible substrates like polyethylene terephthalate (PET), polyether sulfone (PES), and polyimide [175][176][177][178][179][180]. In addition, the thickness of a single atomic layer and the excellent dispersibility in various solvents result in GO having enhanced compatibility with different commercial substrates [181][182][183].…”

Section: Application Of Graphene-based Memristors In Flexible Electromentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young’s modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V−1∙s−1), and high thermal (5000 Wm−1∙K−1) and superior electrical conductivity (1.0 × 106 S∙m−1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.

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Section: Application Of Graphene-based Memristors In Flexible Electromentioning

confidence: 99%

Memristive Non-Volatile Memory Based on Graphene Materials

Shen

Zhao

et al. 2020

Micromachines

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“…Although the nanocomposite film of the RS layer is thin with a thickness of 7 nm, addition of graphene quantum dots is required for obtaining the WORM characteristics. The HRS/LRS resistance ratio is 10 3 and the retention time is 10 4 s. From the above literature survey, a thick or inhomogeneous RS layer is usually required to obtain WORM characteristics [14][15][16][17][18][19][20][21], and the HRS/LRS resistance ratios of the WORM memories are normally 10 2 -10 4 [3,10,12,13,17,18,[20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges

Hsu¹,

Zhang²,

Jhang³

et al. 2021

Semicond. Sci. Technol.

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This paper demonstrates write-once-read-many-times (WORM) behavior of an Ag/CuO/n + -Si memory device. The CuO resistive switching layer with a thickness of 9.7 nm was prepared using a sol-gel process. The device shows a low conduction current of 10 −10 A at a read voltage of 1 V. A sudden current increase is observed when the voltage increases to ∼3 V, corresponding to a resistance switching from a high-resistance state (HRS) to a low-resistance state (LRS). After that, the device remains in the LRS. Degradation of the HRS and the LRS is not observed for 10 4 read cycles. The HRS/LRS resistance ratio is 10 6 , and the data retention time is over 10 5 s. The abrupt current increase cannot be triggered by a negative bias. The formation of Ag conductive bridges in the CuO layer is responsible for the resistance switching. Statistical analyses are performed to study the distributions of the set voltages and the resistances in the HRS and LRS. The effect of the compliance current on the operating current of the Ag/CuO/n + -Si WORM memory is also investigated. The carrier transport mechanisms are found to be dominated by Schottky emission, Ohmic, and SCLC conductions. The energy barrier is 1.066 eV, which is extracted by Schottky emission analysis.

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