Highly Stable Ultrathin Carbosiloxane Films by Molecular Layer Deposition

Zhou, Han; Bent, Stacey F.

doi:10.1021/jp4058725

Cited by 29 publications

(35 citation statements)

References 45 publications

(83 reference statements)

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“…The hybrid film fabricated by Zhou and Bent [ 115 ] differs in some aspects from the other hybrids made up till now. It is the only carbosiloxane film made so far and the precursor used is an inorganic–organic hybrid material in itself, namely 1,2-bis[(dimethylamino)dimethylsilyl]ethane.…”

Section: Reviewmentioning

confidence: 99%

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

Sundberg¹,

Karppinen²

2014

Beilstein J. Nanotechnol.

283

346

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SummaryThe possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications.

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Section: Reviewmentioning

confidence: 99%

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

Sundberg¹,

Karppinen²

2014

Beilstein J. Nanotechnol.

283

346

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“…[ 247 ] In ALD literature, the silicon oxycarbide SiO x C y is also the most frequently reported mixed‐anion carbide. [ 125–127,130,131,248 ] Recently, Closser et al. [ 125 ] fabricated SiO x C y films using bis(trichlorosilyl)methane and water as precursors at room temperature.…”

Section: State‐of‐the‐art Mixed‐anion Ald Thin Filmsmentioning

confidence: 99%

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Tripathi

Karppinen

2021

Adv Materials Inter

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For decades the most successful approach towards new inorganic material innovations for next‐generation devices has been to manipulate the cation composition. As this cation‐centric material development is inevitably approaching its saturation, new chemistries are needed to maintain the pace of technological progress. One of the new chemistry approaches is to play with the anions instead of the cations. Moreover, advances in fabrication techniques are needed to address the endeavors to shrink the device and component dimensions. Here, the combination of mixed‐anion chemistries, such as oxychalcogenides or carbopnictides, and the state‐of‐the‐art atomic layer deposition (ALD) thin‐film technology are highlighted. The unique bottom‐up material building mode of ALD can lead to scientifically exciting but at the same time industry‐feasible material innovations. In this brief review, the present status and prospects, and the challenges of this emerging field are discussed.

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“…It is estimated that more complex materials, such as doped, ternary, and quaternary compounds, will be introduced in a next step [ 106 ]. The difficulty of depositing a binary carbide, such as SiC film, using thermal ALD processes have made researchers look for alternative solutions, such as the incorporation of carbon in silicon-based films, such as SiO 2, to form ternary mixtures, namely SiO x C y [ 107 , 108 ]. Zhou and Bent reported on the carbosiloxane thin films grown by molecular layer deposition (MLD) using 1,2-bis[(dimethylamino)-dimethylsilyl]ethane (DDSE) and ozone precursors at a process temperature of 110 °C [ 107 ].…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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Highly Stable Ultrathin Carbosiloxane Films by Molecular Layer Deposition

Cited by 29 publications

References 45 publications

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

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