Highly stable solution processed metal-halide perovskite lasers on nanoimprinted distributed feedback structures

Brenner, Philipp; Stulz, Mareike; Kapp, Dorothee; Abzieher, Tobias; Paetzold, Ulrich W.; Quintilla, Aina; Howard, Ian A.; Kalt, H.; Lemmer, Uli

doi:10.1063/1.4963893

Cited by 85 publications

(76 citation statements)

References 41 publications

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“…Most of the following work on perovskite thin films concentrated on the workhorse composition for solar cells, methylammonium (CH 3 NH 3 /MA) lead (Pb) triiodide (I 3 ) that emits around 790 nm. Random lasers [18], whispering gallery mode lasers [19][20][21][22], distributed feedback lasers [23][24][25], vertical cavity lasers [26,27] and photonic crystals lasers have been demonstrated using this CH 3 NH 3 PbI 3 composition [28,29].…”

Section: Introductionmentioning

confidence: 99%

“…The stability of triiodide perovskites was shown to be excellent [17,23], although hurdles still remain to achieving continuous-wave lasing [24,30]. Photophysical investigations of CH 3 NH 3 PbX 3 with mixed-halides undertaken in the context of bandgap tuning for photovoltaics revealed that the emission wavelength and intensity of the mixed-halide material is highly unstable under illumination [31][32][33].…”

Section: Introductionmentioning

confidence: 99%

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Triple cation mixed-halide perovskites for tunable lasers

Brenner¹,

Glöckler²,

Rueda-Delgado³

et al. 2017

Opt. Mater. Express

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Metal halide perovskites are recently attracting strong attention due to their potential in solar cells, LEDs, and lasers. Here, we demonstrate the broad spectral tuning of the optical gain characteristics of triple cation (containing methylammonium, formamidinium and cesium) mixed-halide perovskite thin films. We explicitly study the interrelation between amplified spontaneous emission (ASE) thresholds, the operational stability of the gain, and the material composition. The incorporation of cesium and a deficiency of lead in the precursor solutions is found to be crucial for low ASE thresholds and the improved stability of mixed-halide perovskites. We tune the photoluminescence in mixed-halide perovskites between peak wavelengths of 510 and 790 nm by exchanging the halide from iodide to bromide and chloride in small steps of 10%, while preserving the narrowband emission below a linewidth of 130 meV for all mixtures. The optical gain under ns-excitation can be tuned over a significant portion of this spectral window; we observe ASE emission in regions between 545 to 555 nm and 680 to 810 nm. This is a significant step towards perovskite lasers operating through a broad portion of the visible to near infrared spectrum. References and links1. S. Kazim, M. K. Nazeeruddin, M. Grätzel, and S. Ahmad, "Perovskite as Light Harvester: A Game Changer in Photovoltaics," Angew. Chem. Int. Ed. Engl. 53(11), 2812-2824 (2014). 2. S. D. Stranks and H. J. Snaith, "Metal-halide perovskites for photovoltaic and light-emitting devices," Nat.Nanotechnol. 10(5), 391-402 (2015). Tress, A. Abate, A. Hagfeldt, and M. Grätzel, "Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency," Energy Environ. Sci. 9(6), 1989-1997 (2016

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Triple cation mixed-halide perovskites for tunable lasers

Brenner¹,

Glöckler²,

Rueda-Delgado³

et al. 2017

Opt. Mater. Express

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“…[1][2][3][4][5] Even though other optoelectronic devices like light emitting diodes and lasers are being researched, [6][7][8][9][10][11][12][13] perovskite-based photovoltaics (PV) is the key technology driving the fast emergence of perovskitebased optoelectronics. [1][2][3][4][5] Even though other optoelectronic devices like light emitting diodes and lasers are being researched, [6][7][8][9][10][11][12][13] perovskite-based photovoltaics (PV) is the key technology driving the fast emergence of perovskitebased optoelectronics.…”

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confidence: 99%

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

Abzieher

Moghadamzadeh

Schackmar

et al. 2019

Advanced Energy Materials

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137

149

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application-oriented research like process engineering and upscaling is observed. [1][2][3][4][5] Even though other optoelectronic devices like light emitting diodes and lasers are being researched, [6][7][8][9][10][11][12][13] perovskite-based photovoltaics (PV) is the key technology driving the fast emergence of perovskitebased optoelectronics. Recently, power conversion efficiencies (PCEs) close to 24% were demonstrated for perovskite PV, exceeding the PCEs of established thinfilm technologies. [14] Despite the rapid progress in terms of PCE, one key challenge of perovskite-based PV is still its low stability under realistic outdoor stress conditions-temperature, humidity, and ultraviolet (UV) radiation. A significant advance toward more stable devices was demonstrated by engineering the composition of the large cation site of the perovskite crystal structure and by including low-dimensional perovskite interlayers and passivation layers. [15][16][17][18][19][20] Further advances in stability are based on the charge extracting materials and their interfaces with the perovskite absorber layers. [21][22][23] Most reported record PCEs are still based on highly expensive organic hole transport layer (HTL) materials like 2,2′,7,7′-tetrakis[N,N-di (4methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-MeOTAD) or poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). [20,24,25] Although these materials result in good performance on short High-quality charge carrier transport materials are of key importance for stable and efficient perovskite-based photovoltaics. This work reports on electron-beam-evaporated nickel oxide (NiO x ) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet-printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiOx hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all-evaporated perovskite solar cells employing an inorganic NiO x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron-beam-evaporated NiO x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all-evaporated perovskite solar mini-module with a NiO x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm 2 .

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“…Due to their promising electronic and optical properties, tremendous progress has been made in the performance of perovskites solar cells. [6,7] Such films have been incorporated into a variety of optical cavities, including whispering gallery mode cavities, [5,[8][9][10] vertical cavities, [4,11] distributed feedback (DFB) cavities, [12][13][14][15][16] and photonic crystal cavities. [3][4][5] Simple, solution-based fabrication of perovskites allows the fabrication of thin films, which exhibits optical gain within a wide spectral range.…”

Section: Introductionmentioning

confidence: 99%

Micro Lasers by Scalable Lithography of Metal‐Halide Perovskites

Bar‐On

Brenner

Lemmer

et al. 2018

Adv Materials Technologies

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description of the efforts on developing perovskite lasers is given in recent review articles. [19][20][21][22] As the field advances, new approaches for patterning perovskite films are becoming essential. More specifically, a lithographic approach that can define desired perovskite patterns is highly needed in order to utilize these materials for the realization of integrated perovskite photonic devices. Generally speaking, effective lithographic patterning requires three main capabilities. First, the ability to cover the material (in our case perovskites) with a layer of resist and pattern it with sub-micrometer resolution using a scalable process. Second, employment of the patterned resist as an etch mask for complete removal of the unprotected perovskite film. Third, removal of the residual resist mask from the perovskite film. Since metal halide perovskites are unstable soluble materials that are sensitive to a variety of solvents and gases, [23] accomplishing all of the above steps without damaging the film is highly challenging. During the past few years, several attempts have been made in order to address this challenge. Lyashenko et al. [24] demonstrated the ability to pattern perovskites using photolithography followed by SF 6 etching. This approach was utilized to define patterns in photoresists on top of methyl-ammonium lead iodide (MAPbI 3 ) films but was limited to micrometer scale features due to diffraction effects in photolithography. In addition, the chemical reaction that was used in order to etch the material only modified the exposed areas chemically (converting the material to PbF 2 ) and did not remove the perovskite layer completely as desired from a proper etching technique. Zhang et al. [25] demonstrated a different approach where PMMA layers were deposited on top of a MAPbBr 3 film and patterned using electron beam lithography (EBL) followed by dry Cl etching. Although this method can potentially generate sub-micrometer features, it is based on a serial patterning technique (EBL) and is thus limited in terms of speed and cost. In addition, the scanning electron microscopy (SEM) images of the patterned surface suggest that the etching process left a residual layer on the surface (possibly PbCl 2 ) and was unable to remove the perovskite completely. A slightly different approach to pattern perovskite films, involving lift-off instead of etching, was recently successfully demonstrated. [26] However, this technique necessitates the evaporation of perovskite films and is not compatible with the standard spin-coating film preparation method which is simple, inexpensive, and renders these materials A complete lithographic scheme for thin metal halide perovskite films is demonstrated and utilized for the realization of perovskite micro lasers. The process consists of nanoimprint lithography followed by ion beam milling. It is simple, fast, scalable, and exhibits sub-micrometer resolution. The optical properties of the perovskite films are obtained by employing analytical tools as well as by cha...

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Highly stable solution processed metal-halide perovskite lasers on nanoimprinted distributed feedback structures

Cited by 85 publications

References 41 publications

Triple cation mixed-halide perovskites for tunable lasers

Triple cation mixed-halide perovskites for tunable lasers

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

Micro Lasers by Scalable Lithography of Metal‐Halide Perovskites

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