Highly stable Ba-addition InZnSnO channels of light emitting transistors and thin film transistors

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

“…As the cosputtering power increased, the carrier concentration of the InZnTiON film decreased from 4.86 × 10 15 /cm 3 to 1.40 × 10 14 /cm 3 . The decrease in the carrier concentration could be attributed to the decrease in the number of oxygen vacancies by the following reaction normalO normalO normalX ↔ normalV normalÖ + 2 normale − + 1 2 normalO 2 …”

“…In addition, because of the substandard electrical properties of TiN doping, which reduced the on-current value, the on–off ratio of the TFT decreased corresponding to the TiN doping content. The field-effect mobility (μ FE ) and subthreshold swing (S.S) of the TFTs were calculated using the following equations μ FE = ( 1 C ox V DS · L W ) ∂ I DS ∂ V GS S . S = true( ∂ 0.25em log nobreak0em.25em⁡ I normalD normalS ∂ V normalG normalS true) − 1 where C ox is the gate capacitance per unit area for the SiO 2 gate insulator, L is the channel length, and W is the channel width. Because the μ FE value is also affected by the electrical properties of the device, a degraded electrical property would decrease μ FE .…”

“…Studies on amorphous metal oxide semiconductors (AOSs) have been the main research topics in displays and semiconductors following the introduction of InGaZnO (IGZO)-based thin-film transistors (TFTs). − Owing to the orbital overlap in metal cations and the wide band gap of AOSs, AOS thin films have high mobility and transmittance in the visible-light region. − These films are easily deposited using various methods, such as physical vapor deposition, − chemical vapor deposition, − atomic layer deposition, − or solution processing. − Further, AOSs are suitable for large-area processes because of their amorphous structure. , Despite the demerits of AOS, such as the limitations of p-type semiconductor materials, the merits of AOS have attracted considerable attention in flat panel displays and are still being actively studied. In particular, indium-based oxide semiconductors, such as IGZO, − InZnO, − and InZnSnO, − have been mainly applied as channel layers of TFTs owing to their excellent electrical properties. In the AOS structure, the conduction band consists of an s-orbital overlap caused by the heavy post-transition cation, which has an electron configuration of ( n – 1)­d 10 n s 0 .…”

“…The titanium cation (Ti 4+ ) has a lower electronegativity (1.54), lower standard electrode potential (SEP, −0.88 V), and higher metal–oxygen binding energy (662 kJ/mol) than Zn 2+ (1.65, −0.76 V, and 284 kJ/mol) and In 3+ (1.78, −0.34 V, and 360 kJ/mol). The lower electronegativity and SEP value can result in strong chemical bonding of metal and oxygen, which can reduce the accuracy of oxygen vacancies. ,, Nitrogen has one less electron than oxygen, which can reduce the concentration of excess electrons and improve the carrier mobility of the film and the stability of the TFT. , However, the effect of TiN doping on InZnO channels has not yet been thoroughly studied.…”

“…The lower electronegativity and SEP value can result in strong chemical bonding of metal and oxygen, which can reduce the accuracy of oxygen vacancies. 29,37,44 Nitrogen has one less electron than oxygen, which can reduce the concentration of excess electrons and improve the carrier mobility of the film and the stability of the TFT. 45,46 However, the effect of TiN doping on InZnO channels has not yet been thoroughly studied.…”