“…Studies on amorphous metal oxide semiconductors (AOSs) have been the main research topics in displays and semiconductors following the introduction of InGaZnO (IGZO)-based thin-film transistors (TFTs). − Owing to the orbital overlap in metal cations and the wide band gap of AOSs, AOS thin films have high mobility and transmittance in the visible-light region. − These films are easily deposited using various methods, such as physical vapor deposition, − chemical vapor deposition, − atomic layer deposition, − or solution processing. − Further, AOSs are suitable for large-area processes because of their amorphous structure. , Despite the demerits of AOS, such as the limitations of p-type semiconductor materials, the merits of AOS have attracted considerable attention in flat panel displays and are still being actively studied. In particular, indium-based oxide semiconductors, such as IGZO, − InZnO, − and InZnSnO, − have been mainly applied as channel layers of TFTs owing to their excellent electrical properties. In the AOS structure, the conduction band consists of an s-orbital overlap caused by the heavy post-transition cation, which has an electron configuration of ( n – 1)d 10 n s 0 .…”