Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure

Li, H. K.; Chen, T. P.; Hu, Shaoxiang; Li, X. D.; Liu, Y.; Lee, Pooi See; Wang, X. P.; Li, H. Y.; Lo, Guo‐Qiang

doi:10.1364/oe.23.027683

Cited by 39 publications

(20 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Tauc plot for a 30 nm thick layer (see Figure b) confirms the direct band gap as the exponential factor k in ( αhν ) k is equal to k = 2. The corresponding band‐gap energy of the NiO x is around 3.7 eV, which is in good agreement with values from the literature . Thus, based on XRD and the band‐gap energy, the formation of a relatively pure nickel oxide matrix close to its stoichiometric composition can be concluded.…”

Section: Resultssupporting

confidence: 88%

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

Abzieher

Moghadamzadeh

Schackmar

et al. 2019

Advanced Energy Materials

137

149

View full text Add to dashboard Cite

application-oriented research like process engineering and upscaling is observed. [1][2][3][4][5] Even though other optoelectronic devices like light emitting diodes and lasers are being researched, [6][7][8][9][10][11][12][13] perovskite-based photovoltaics (PV) is the key technology driving the fast emergence of perovskitebased optoelectronics. Recently, power conversion efficiencies (PCEs) close to 24% were demonstrated for perovskite PV, exceeding the PCEs of established thinfilm technologies. [14] Despite the rapid progress in terms of PCE, one key challenge of perovskite-based PV is still its low stability under realistic outdoor stress conditions-temperature, humidity, and ultraviolet (UV) radiation. A significant advance toward more stable devices was demonstrated by engineering the composition of the large cation site of the perovskite crystal structure and by including low-dimensional perovskite interlayers and passivation layers. [15][16][17][18][19][20] Further advances in stability are based on the charge extracting materials and their interfaces with the perovskite absorber layers. [21][22][23] Most reported record PCEs are still based on highly expensive organic hole transport layer (HTL) materials like 2,2′,7,7′-tetrakis[N,N-di (4methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-MeOTAD) or poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). [20,24,25] Although these materials result in good performance on short High-quality charge carrier transport materials are of key importance for stable and efficient perovskite-based photovoltaics. This work reports on electron-beam-evaporated nickel oxide (NiO x ) layers, resulting in stable power conversion efficiencies (PCEs) of up to 18.5% when integrated into solar cells employing inkjet-printed perovskite absorbers. By adding oxygen as a process gas and optimizing the layer thickness, transparent and efficient NiOx hole transport layers (HTLs) are fabricated, exhibiting an average absorptance of only 1%. The versatility of the material is demonstrated for different absorber compositions and deposition techniques. As another highlight of this work, all-evaporated perovskite solar cells employing an inorganic NiO x HTL are presented, achieving stable PCEs of up to 15.4%. Along with good PCEs, devices with electron-beam-evaporated NiO x show improved stability under realistic operating conditions with negligible degradation after 40 h of maximum power point tracking at 75 °C. Additionally, a strong improvement in device stability under ultraviolet radiation is found if compared to conventional perovskite solar cell architectures employing other metal oxide charge transport layers (e.g., titanium dioxide). Finally, an all-evaporated perovskite solar mini-module with a NiO x HTL is presented, reaching a PCE of 12.4% on an active device area of 2.3 cm 2 .

show abstract

Section: Resultssupporting

confidence: 88%

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

Abzieher

Moghadamzadeh

Schackmar

et al. 2019

Advanced Energy Materials

137

149

View full text Add to dashboard Cite

show abstract

“…Finally, the p- and n-type character of NiO x films was demonstrated by fabricating a diode. Previously, pn heterojunctions have been demonstrated by using NiO as the p-type material and ZnO, IGZO, or Ga 2 O 3 as the n-type material. ,,− Also, just a few reports of NiO homojunctions exist. For example, Tyagi et al fabricated a NiO-based homojunction by sputtering and achieved two orders of rectification; however, the diodes were fabricated at temperatures as high as 500 °C and have very high electron concentration (∼10 20 cm –3 ) for the n-type layer, resulting in field-dependent leakage current.…”

Section: Resultsmentioning

confidence: 99%

Controlling Carrier Type and Concentration in NiO Films To Enable in Situ PN Homojunctions

Pintor‐Monroy

Murillo-Borjas

Catalano

et al. 2019

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is used to control its carrier type and concentration, obtaining both nand p-type films. Carrier concentration can be controlled, ranging from 10 19 to 10 14 cm −3 . Films deposition is performed at 200 °C, a relatively low temperature that enables the use of glass as substrate. Experimental band diagrams for n-type NiO are obtained for the first time. Finally, a NiO homojunction is demonstrated by introducing a low carrier concentration layer in between n-and p + -type NiO layers. Layers are deposited in situ, preventing contamination and improving the interface quality, as observed by TEM. The Ni:O ratio for each layer was also obtained by analytical TEM measurements, demonstrating the impact of the oxygen partial pressure on the films' stoichiometry and the simplicity of our process to control carrier type and carrier concentration in oxide semiconductors.

show abstract

“…Also, a-IGZO is n-type semiconductor has distinct advantages over other semiconductors such as its usability in room temperature processes, good stability, high transparency in the visible region (380-750 nm), large energy band gap of 3.5 eV (Li et al 2019), the low cost and environmental friendly composition (Moreira et al 2019). IGZO thin film transistors detect UV light and are generally used in the application of UV detectors (Li et al 2015). Thin-film transistors (TFTs) manufactured by polycrystalline Silicon (Si) and amorphous Si, which are the basic materials of existing flat panel displays and over glass systems.…”

Section: Introductionmentioning

confidence: 99%

“…Fortunately, oxide-based TFTs have high mobility and can be produced at low substrate temperatures. Due to the commonness of Si semiconductor manufacturing processes, it is very significant to examine the IGZO/p-Si hetero junction diode structures, where IGZO semiconductor can be a viable nominee to channel layer in a Si-based electronic device (Li et al 2015, Xie et al 2012. Band alignment between a-IGZO and Si semiconductors helps to foresee the electronic structures such as electron transport at the interface, band bending, built potential and performances of hetero junction devices (Chen et al 2015).…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

Yiğit¹,

Gündoğdu²,

Kılıç³

2021

Afyon Kocatepe University Journal of Sciences and Engineering

View full text Add to dashboard Cite

In this study, IGZO thin films were produced on SLG and p-Si wafer at low temperature, under oxygen gas pressure of 5×10 -2 and 7×10 -2 mbar, using PLD technique and these thin films were annealed at 300 o C temperature. IGZO thin films were grown in amorphous structure. As the oxygen gas pressure was increased, the particle size in the thin films were increased. IGZO/p-Si heterojunction diode was produced based on IGZO thin film that was deposited under oxygen pressure in 7×10 -2 mbar and not annealed, and − curves of this diode in darkness and under the illumination condition were obtained and then its barrier height and idelaity factor were calculated. In an illumination condition, , and Ф values of IGZO/Si heterojunction diode were calculated by the traditional − , Norde and Cheung Cheung methods. Results obtained in this work have been interpreted as well as concluded to be close to each other.

show abstract

Highly spectrum-selective ultraviolet photodetector based on p-NiO/n-IGZO thin film heterojunction structure

Cited by 39 publications

References 34 publications

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

Electron‐Beam‐Evaporated Nickel Oxide Hole Transport Layers for Perovskite‐Based Photovoltaics

Controlling Carrier Type and Concentration in NiO Films To Enable in Situ PN Homojunctions

Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

Contact Info

Product

Resources

About