2003
DOI: 10.1143/jjap.42.l435
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Highly Sensitive ZnO Ozone Detectors at Room Temperature

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Cited by 59 publications
(36 citation statements)
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“…[1][2][3][4][5][6][7][8][9] The electrical conductivity of ZnO is controlled by intrinsic defects such as oxygen vacancies and/or zinc interstitials, which act as ntype donors. When doped with group III elements such as indium, boron, gallium and aluminum the electrical resistivity decrease.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9] The electrical conductivity of ZnO is controlled by intrinsic defects such as oxygen vacancies and/or zinc interstitials, which act as ntype donors. When doped with group III elements such as indium, boron, gallium and aluminum the electrical resistivity decrease.…”
Section: Introductionmentioning
confidence: 99%
“…In addition to potential use as transparent conducting oxide in optoelectric devices, ZnO thin films can also be used for gas sensing because of high sensitivity to many gases [12]. The conductivity of ZnO can change over orders of magnitude after exposure to UV light and subsequent oxidation [13]. Also, ZnO thin film based transistors have recently been proposed to be used as active channel material [14].…”
Section: Introductionmentioning
confidence: 99%
“…It is well known that electrical properties of doped-ZnO varistors depend on grain boundary effects, which are, in principle, characteristics of ZnO bulk structure; the granular morphology is responsible for its low conductivity at low fields, but above a critical field, tunneling effect across the potential barriers at the grain boundaries enhances considerably the material conductivity [6]. New deposition techniques, combined with doping, produced conductive and transparent ZnO thin films, providing the exploration of new technological applications as gas sensors [7], transparent electrodes for OLEDs [8], transparent transistors [9], etc. In addition, its (nano-to-micro)granular and (meso)uniform morphologies, whose grain dimensions varies from tenths nanometers to micrometers, permits to obtain a great variety of ZnO nanostructures [10].…”
Section: Introductionmentioning
confidence: 99%