“…It is well known that electrical properties of doped-ZnO varistors depend on grain boundary effects, which are, in principle, characteristics of ZnO bulk structure; the granular morphology is responsible for its low conductivity at low fields, but above a critical field, tunneling effect across the potential barriers at the grain boundaries enhances considerably the material conductivity [6]. New deposition techniques, combined with doping, produced conductive and transparent ZnO thin films, providing the exploration of new technological applications as gas sensors [7], transparent electrodes for OLEDs [8], transparent transistors [9], etc. In addition, its (nano-to-micro)granular and (meso)uniform morphologies, whose grain dimensions varies from tenths nanometers to micrometers, permits to obtain a great variety of ZnO nanostructures [10].…”