2013
DOI: 10.1016/j.sna.2012.10.015
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Highly sensitive wafer-level packaged MEMS magnetic field sensor based on magnetoelectric composites

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Cited by 85 publications
(55 citation statements)
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“…They can be used in different technological applications such as magnetic sensors, microelectromechanical systems (MEMS), and energy harvesters [1][2][3]. Composite multiferroic materials, which consist of ferroelectric and ferromagnetic phases, show a much larger magnetoelectric effect compared to single-phase materials.…”
Section: Introductionmentioning
confidence: 99%
“…They can be used in different technological applications such as magnetic sensors, microelectromechanical systems (MEMS), and energy harvesters [1][2][3]. Composite multiferroic materials, which consist of ferroelectric and ferromagnetic phases, show a much larger magnetoelectric effect compared to single-phase materials.…”
Section: Introductionmentioning
confidence: 99%
“…4,10,15,[20][21][22] Sensitivities of a few pico-Tesla to hundreds of femto-Tesla for 1-30 Hz magnetic fields are required for such application. A viable approach for achieving such sensitivities is a bilayer ME sensor operating under frequency modulation at bending resonance.…”
Section: Resultsmentioning
confidence: 99%
“…Mo Li et al [6] reported a Lorentz force magnetometer for electronic compass with a resolution 210 nT/√Hz with a DC supply of 2 V at 21.29 KHz resonance frequency. Magnetoelectric composites have been used by Marauska et al [7] as cantilever deposit to give a minimum resolution of 30 pT and sensitivity of 3.8 V/mT. Using a bias current of 7.245 mA, Kumar et al [8] reported sensitivity of a Lorentz force magnetometer device to be 2.107 mV/nT, considering a low noise floor of 2.8 pT/√Hz.…”
Section: Introductionmentioning
confidence: 99%