Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure

Phan, Hoang‐Phuong; Dowling, Karen M.; Nguyen, Tuan‐Khoa; Dinh, Toan; Senesky, Debbie G.; Namazu, Takahiro; Dao, Dzung Viet; Nguyen, Nam‐Trung

doi:10.1016/j.matdes.2018.06.031

Cited by 51 publications

(21 citation statements)

References 28 publications

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“…Silicon carbide (SiC) is a large bandgap material with high electron mobility and chemical inertness, enabling its applications in pressure, gas, and temperature sensors. Given the high temperature and inert conditions, Zank and co‐workers and other group discovered that siloxane polymers could be converted into SiC.…”

Section: Introductionmentioning

confidence: 99%

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Gao

et al. 2018

Adv Funct Materials

159

134

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Electronic skins (e-skins) have been widely investigated as important platforms for healthcare monitoring, human/machine interfaces, and soft robots. However, mask-free formation of patterned active materials on elastomer substrates without involving high-cost and complicate processes is still a grand challenge in developing e-skins. Here, SiC-based strain sensor arrays are fabricated on elastomer for e-skins by a laser direct writing (LDW) technique, which is mask-free, highly efficient, and scalable. The direct synthesis of active material on elastomer is ascribed to the LDW-induced conversion of siloxanes to SiC. The SiC-based devices own a highest sensitivity of ≈2.47 × 10 5 achieved at a laser power of 0.8 W and a scanning velocity of 1.25 mm s −1 . Moreover, the LDW-developed device provides a minimum strain detection limit of 0.05%, a small temperature drift, and a high mechanical durability for over 10 000 cycles. When it is mounted onto human skins, the SiC-based device is able to monitor external stimuli and human health conditions, with the capability of wireless data transmission. Its potential application in e-skins is further proved by an LDW-fabricated device having 3 × 3 SiC sensor array for tactile sensing.

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Section: Introductionmentioning

confidence: 99%

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Gao

et al. 2018

Adv Funct Materials

159

134

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show abstract

“…[256][257][258][259][260] However, the fabrication of high-performance pressure sensors based on WBG semiconductor nanowires, especially for SiC, group III-nitrides, and diamond, are very rare. [261][262][263] For instance, Phan et al reported an effective approach to develop highly sensitive pressure sensors employing 3C-SiC nanowires fabricated at the center of a dogbone-like structure. [261] Figure 12a shows a photograph of SiC nanowire-based pressure sensors mounted on an acrylic holder.…”

Section: Pressure Sensorsmentioning

confidence: 99%

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

et al. 2020

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Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III‐nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom‐up and top‐down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast‐emerging research field.

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“…[1][2][3] The advantages result from the high energy bandgap, mechanical strength, chemical inertness, and the high melting point of SiC. [4][5][6] Therefore, a wide range of SiC-based microsensing/electronics devices have been developed with several micromachining techniques. [7,8] Unlike silicon counterparts, SiC micromachining processes are undoubtedly limited and expensive due to the chemical inertness of SiC.…”

Section: Introductionmentioning

confidence: 99%

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

et al. 2020

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Silicon carbide (SiC)-based microsystems are promising alternatives for siliconbased counterparts in a wide range of applications aiming at conditions of high temperature, high corrosion, and extreme vibration/shock. However, its high resistance to chemical substances makes the fabrication of SiC particularly challenging and less cost-effective. To date, most SiC micromachining processes require time-consuming and high-cost SiC dry-etching steps followed by metal wet etching, which slows down the prototyping and characterization process of SiC devices. This work presents a lithography and etching-free microfabrication for 3C-SiC on insulator-based microelectromechanical systems (MEMS) devices. In particular, a direct laser ablation technique to replace the conventional lithography and etching processes to form functional SiC devices from 3C-SiC-onglass wafers is used. Utilizing a single line-cutting mode, both metal contact shapes and SiC microstructures can be patterned simultaneously with a remarkably fast speed of over 20 cm s À1. As a proof of concept, several SiC microdevices, including temperature sensors, strain sensors, and microheaters, are demonstrated, showing the potential of the proposed technique for rapid and reliable prototyping of SiC-based MEMS.

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Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure

Cited by 51 publications

References 28 publications

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring

Lithography and Etching‐Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation

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