Highly sensitive photodetectors on the basis of Au-oxide-n-GaP_0.4As_0.6

Abstract

This paper presents the results of studies of the photoelectric properties of Au-oxide-n-GaP0.4As0.6 nanostructures with different thicknesses of oxide layer (10-100Å) in the visible and ultraviolet regions of the spectrum. As a result, photodetectors of UV radiation based on Au-oxide-n-GaAs0.6P0.4 nanostructures with an optimal thickness of the oxide layer (δ=30-60 Å) were developed. The creation of highly effective photodetectors of solar ultraviolet radiation (λ=280-400 nm, hυ=3,1-4,43 eV) for ecological purposes has been reported.

Features of thermoelectric properties of some magnetic semiconductors

“…In the compound CuFeS2 this value is small,  ~ 1 cm 2 V -1 s -1 , and almost independent of temperature in the interval measured. Such behavior is characteristic of a large-radius magnetic polaron (ferron) in antiferromagnetic, when the conduction electron creates a ferromagnetic region of radius around itself [25][26][27]. The results obtained are consistent with the results obtained on samples prepared using a conventional solid-phase reaction, as described earlier.13) The author noted that such samples give the Seebeck effect practically independent of temperatures above 100 K and show a large negative value at room temperature.…”

“…Therefore, taking these results and the small value of the electron concentration at low temperatures as the basis, we concluded that CuFeS2 belongs. to this class of compounds [19][20][21][22][23][24][25][26]. Similar investigations of CuFeTe, also reveal the existence of the power behaviour of the R(T), o(T) and n(T) values (figure 2).…”