Highly sensitive NOx gas sensor based on a Au/n-Si Schottky diode

Exploiting Zinc Oxide Re-emission to Fabricate Periodic Arrays

“…The gold itself is also likely to form a Schottky diode with the silicon (36) and in the case of a p-type silicon substrate this would preferentially channel negative charge from the substrate to the gold and from there through the gold/zinc oxide junction into the overlying zinc oxide. In contrast, use of an ntype silicon would channel holes into the gold and this would in turn reduce the rectification on the gold/zinc oxide junction (by promoting a greater reverse current of electrons from zinc oxide to gold) and hence reduce the proposed negative charge on the zinc oxide.…”

“…In all cases, any negatively charged zinc oxide species re-emitted from the triangular surface can be propelled along the electric field lines into the space lying under the polymer sphere in the region between points b and c. However, very few species are likely to settle in the zone between points c and d because the electric field lines in that region of the sample are directed parallel to the surface of the silicon substrate. Furthermore, few species will The gold itself is also likely to form a Schottky diode with the silicon (36), and in the case of a p-type silicon substrate, this would preferentially channel negative charge from the substrate to the gold and from there through the gold/zinc oxide junction into the overlying zinc oxide. In contrast, use of an n-type silicon would channel holes into the gold, and this would in turn reduce the rectification on the gold/zinc oxide junction (by promoting a greater reverse current of electrons from zinc oxide to gold) and hence reduce the proposed negative charge on the zinc oxide.…”

Promotion of NO2 Sensing Performance with Ag Modified DDT/Au/GaAs-Based Schottky Diode

“…From reported research, many types of sensing devices are used in gas sensors, i.e., electrochemical, [7][8][9][10][11][12][13][14][15] chemiresistive-type [16][17][18][19][20][21][22][23][24][25] and Schottky-type devices. [26][27][28][29][30] The electrochemical sensor are based on the solidelectrolyte with metal oxide working electrode. [12][13][14][15] The chemiresistive-type of gas sensors have mainly been based on metal oxides, such as SnO 2 , 19,20 ZnO, 21,22 WO 3 , 23,24 and Fe 2 O 3 .…”

“…[12][13][14][15] The chemiresistive-type of gas sensors have mainly been based on metal oxides, such as SnO 2 , 19,20 ZnO, 21,22 WO 3 , 23,24 and Fe 2 O 3 . 25 On the other hand, semiconductor materials including n-Si, 26 InP, 27 Si/Al, 28 InGaP, 29 and GaAs 30 have been used in Schottky-type gas sensors. Schottky-type gas sensors show the advantages of small size, fast sensing response, low cost, and high sensitivity.…”

“…Schottky-type gas sensors show the advantages of small size, fast sensing response, low cost, and high sensitivity. [26][27][28][29][30] In order to enhance the sensing performance, noble metal and organic self-assembled monolayers (SAM) have been used in gas sensors. 31,32 Furthermore, the metal/organic monolayer modification on the surface of sensing devices was reported to reveal an enhanced sensing property.…”