Highly sensitive hot electron bolometer based on disordered graphene

Han, Qi; Gao, Teng; Zhang, Rui; Chen, Yi; Chen, Jianhui; Liu, Gerui; Zhang, Yanfeng; Liu, Zhongfan; Wu, Xiaosong; Yu, Dapeng

doi:10.1038/srep03533

Cited by 75 publications

(70 citation statements)

References 40 publications

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“…To date, 2D graphene‐based thermal detectors consist of photo‐thermoelectric detectors,25, 26, 27 bolometers,93, 94 pyroelectric detectors 95. Among them, graphene thermopile has been fabricated for imaging system96 whereas the temperature coefficient of resistance (TCR) of such bolometers is unsatisfying 97.…”

Section: General Photogatingmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors.

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Section: General Photogatingmentioning

confidence: 99%

Photogating in Low Dimensional Photodetectors

2017

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“…A stronger temperature dependence was obtained either by using dual-gated bilayer graphene 1,7 to create a tunable band gap 7 , or by introducing defects to induce strong localization 2 . Both schemes have successfully produced bolometric detection, with responsivities up to 2 × 10 5 V W -1 and temperature coefficient for the resistance as high as 22 kK -1 at 1.5K 1,2 . These devices required the use of multilayer structures adding complexity.…”

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confidence: 99%

Epitaxial graphene quantum dots for high-performance terahertz bolometers

et al. 2016

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2Light absorption in graphene causes a large change in electron temperature, due to low electronic heat capacity and weak electron phonon coupling, 1-3 making it very attractive as a hot-electron bolometer material. Unfortunately, the weak variation of electrical resistance with temperature has substantially limited the responsivity of graphene bolometers. Here we show that quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature due to quantum confinement, higher than 430 M K -1 at 2.5 K, leading to responsivities for absorbed THz power above 1 × 10 10 V W -1 . This is five orders of magnitude higher than other types of graphene hot electron bolometers. The high responsivity combined with an extremely low noise-equivalent power, about 2 × 10 -16 W/√Hz at 2.5K, place the performance of graphene quantum dot bolometers well above commercial cooled bolometers. Additionally, these quantum dot bolometers have the potential for superior performance for operation above 77K.The electrical resistivity of pristine graphene shows a weak temperature dependence, varying by less than 30% (200% for suspended graphene) from 30 mK to room temperature 4,5 , because of the very weak electron-phonon scattering 6 . A stronger temperature dependence was obtained either by using dual-gated bilayer graphene 1,7 to create a tunable band gap 7 , or by introducing defects to induce strong localization 2 . Both schemes have successfully produced bolometric detection, with responsivities up to 2 × 10 5 V W -1 and temperature coefficient for the resistance as high as 22 kK -1 at 1.5K 1,2 . These devices required the use of multilayer structures adding complexity. In the case of bilayer graphene, top and bottom gates were needed to electrically induce a bandgap. In the case of disordered graphene, a boron nitride layer was used as a tunneling barrier between the graphene and the electrodes to reduce thermal conductance due to diffusion of the electrons to the electrodes. 3Here we demonstrate hot-electron bolometric detection using nano-patterned dots of epitaxial graphene. A bandgap is induced via quantum confinement, without the need of gates, using a simple single-layer structure. We study the THz response of dots with diameter varying from 30 nm to 700 nm, at 0.15 THz and at temperatures from 2.5K to 80K. These devices are extremely sensitive and the responsivity increases by decreasing the dot diameter, with the smaller dots still showing a clear response at liquid nitrogen temperature. Our fabrication process is fully scalable and easily provides multiple devices on the same chip, making it suitable for bolometer arrays. Moreover, its flexibility allows patterning of arrays of dots electrically connected in parallel, to control the device impedance while preserving the strong temperature dependence.We fabricated our dots using e-beam lithography and a process developed by Yang et al., 8 (see Methods). Fig. 1a shows an image of a typical quantum dot and the temperature dependenc...

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“…In our strongly disordered graphene, the former is significantly suppressed due to a very low carrier diffusivity. It has been found that e-p interaction dominates the energy dissipation in such devices [28]. Then, the electronic temperature can be directly inferred from the resistance.…”

Section: Resultsmentioning

confidence: 99%

“…Previously, we have already demonstrated a hot electron bolometer based on disordered graphene [28]. It has been shown that the divergence of the resistance at low temperature can be utilized as a sensitive thermometer for electrons.…”

Section: Resultsmentioning

confidence: 99%

Observation of vacancy-induced suppression of electronic cooling in defected graphene

et al. 2015

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Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect of dynamic disorder and observe over an order of magnitude suppression of electronic cooling compared with clean graphene. The effect is stronger in graphene with more vacancies, confirming its vacancyinduced nature. The dependence of the coupling constant on the phonon temperature implies its link to the dynamics of disorder. Our study highlights the effect of disorder on electron-phonon interaction in graphene. In addition, the suppression of electronic cooling holds great promise for improving the performance of graphene-based bolometer and photo-detector devices.

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Highly sensitive hot electron bolometer based on disordered graphene

Cited by 75 publications

References 40 publications

Photogating in Low Dimensional Photodetectors

Photogating in Low Dimensional Photodetectors

Epitaxial graphene quantum dots for high-performance terahertz bolometers

Observation of vacancy-induced suppression of electronic cooling in defected graphene

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