“…Gas sensor devices based on chemo-resistive metal oxide semiconductors (MOSs), (Barsan and Weimar, 2001;Comini et al, 2002;Barsan et al, 2007;Lee, 2009;Wang et al, 2010;Jin et al, 2017) such as SnO 2 (Batzill and Diebold, 2005;Ren et al, 2015;Xu et al, 2015;Cheng et al, 2016;Kida et al, 2016;Li et al, 2016), ZnO (Xu et al, 2000;Wan et al, 2004;Li et al, 2017;Morandi et al, 2017), In 2 O 3 (Li et al, 2003;Zhang et al, 2004;Xiao et al, 2017), WO 3 (Li et al, 2004;Yang and Guo, 2017), and CuO (Kim and Lee, 2014), are widely used for the detection of toxic and explosive gases (NO 2 , CO, CH 4 , H 2 S, and H 2 ) as well as VOCs (C 3 H 6 O, and C 2 H 5 OH). The detection mechanism of these MOSs is based on the resistivity change after the interaction of the analyte gas with the surface of the material, either by direct (NO 2 ) or indirect (H 2 , CO, CH 4 ) mechanisms (Barsan and Weimar, 2001;Batzill and Diebold, 2005).…”