Highly sensitive Ga2O3 MSM solar-blind UV photodetector with impact ionization gain
Qiyi Wan,
Anzhen Zhang,
Weiwei Cao
et al.
Abstract:In this study, a (400) crystal-oriented β-Ga2O3 thin film with a thickness of approximately 400 nm was grown on a c-plane sapphire substrate using atomic layer deposition. Schottky contact-type metal-semiconductor-metal solar-blind ultraviolet detectors with an Au/Ni/Ga2O3/Ni/Au structure were fabricated on the epitaxial thin films. The Schottky barrier height is about 1.1 eV. The device exhibited a high responsivity of up to 800 A/W, and a detectivity of 6 × 1014 Jones while maintaining a relatively fast resp… Show more
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