Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect

Abstract

A highly sensitive flexible magnetic sensor based on the anisotropic magnetoresistance effect is fabricated. A limit of detection of 150 nT is observed and excellent deformation stability is achieved after wrapping of the flexible sensor, with bending radii down to 5 mm. The flexible AMR sensor is used to read a magnetic pattern with a thickness of 10 μm that is formed by ferrite magnetic inks.

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

“…In this work, the BPFMO/BGTWO heterostructure was able to reduce the antiferromagnetic Fe 2+ -O 2− -Mn 3+ interaction, and produced better magnetic properties. The ME coupling effect may be produced by a coupling of electric dipoles and electron spins through interfacial elastic strain transferred between ferroelectric and ferromagnetic components [25,26,27]. Additionally, the bilayer thin film exhibited a 2Mr of 4.6 emu/g and a saturation magnetization (Ms) of 15 emu/g.…”

Layered Topological Insulators and Semimetals for Magnetoresistance Type Sensors

“…Sulaev et al. observed a large in‐plane AMR (9%) in BSTS nanoflakes, where the AMR value was larger than those of FMs . A higher in‐plane AMR ratio up to ≈68% was even observed in the Dirac semimetal Cd 3 As 2 , which may be induced by the Berry curvature of the band structure…”

“…In the AMR effect, the resistance relies on the angles between the current and magnetization direction. In‐plane AMR is observed in ferromagnets, which is widely used in magnetic sensors nowadays . The origin of AMR in ferromagnets is the spin‐dependent scattering anisotropy.…”

“…The origin of AMR in ferromagnets is the spin‐dependent scattering anisotropy. Usually, the AMR in ferromagnets is less than 1% or a few percent . The AMR is usually defined as ( R | | − R ⊥ )/ R ⊥ × 100%.…”

“…In the higher density devices, the stray field could perturb neighboring ferromagnetic layers . Besides, an external magnetic bias is required in sensors based on ferromagnets, rendering an addtional power consumption . Moreover, the unipolar response to a magnetic field in GMR and TMR devices is impractical for sensor applications .…”