Highly-sensitive detection of the lattice distortion in single bent ZnO nanowires by second-harmonic generation microscopy

Han, X. F.; Wang, Kai; Lu, Peixiang

doi:10.1364/fio.2016.jth2a.24

Cited by 4 publications

(6 citation statements)

References 16 publications

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“…A small dark gap with low SHG efficiency (dark fringe) was observed only in the twinned rod, which indicates the existence of twin defects. Furthermore, use of polarization-dependent SHG microscopy to efficiently detect the lattice distortion in single-bent ZnO NWs has been demonstrated [25].…”

Section: Second Harmonic Generation In Zno Nanowiresmentioning

confidence: 99%

“…Very high values of susceptibility tensorial component of 22-30 pm/V were achieved by changing the crystallographic orientation or decorating the surface with metal nanoparticles followed by bicolor coherent treatment or doping-induced crystal symmetry deviation [20][21][22][23]. Recently, development of ZnO-based SHG microscopy has been successfully demonstrated [24,25].…”

Section: Introductionmentioning

confidence: 99%

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Second Harmonic Generation in ZnO Nanowires

Dhara¹,

Lynch²

2017

Nanowires - New Insights

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Second harmonic generation (SHG) is one of the most researched nonlinear material properties and finds applications in many fields ranging from laser projection to cancer detection to future optical switches for molecular devices. Studying SHG in ZnO nanostructures started few years ago and there is a long way to go to compete with the existing nonlinear crystals. Information gathered over the past few years in research on SHG of ZnO nanowires (NWs) is summarized in this chapter. Recent advancement in the growth techniques for various types of ZnO NWs used for SHG studies is also discussed. We present an extensive analysis and discussion on some key parameters that directly modify the efficiency of SHG in ZnO NWs. The key parameters considered for discussion are aspect ratio of NWs, doping, and external strain. At the end, current standing on the reported values of nonlinear coefficients and future outlook are presented.

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Section: Second Harmonic Generation In Zno Nanowiresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Second Harmonic Generation in ZnO Nanowires

Dhara¹,

Lynch²

2017

Nanowires - New Insights

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“…14,15 In addition, NW growth has a larger tolerance for lattice mismatch than thin-film epitaxial growth, resulting in more flexibility in the substrate selection and mechanical properties, which benefits to the effective modulation of the optical nonlinear susceptibility by external bending or twisting strains. 16,17 III−V semiconductor NWs have been applied for various optoelectronic devices owing to large electron g-factors and small electron effective mass. 18−20 As the representative III−V semiconductor, indium arsenide (InAs) has a number of advantages, including high room-temperature electron mobility, low electronic effective loss, and strong spin−orbit interaction, 21,22 which make it an attractive candidate for NW-based electronic and photonic devices.…”

mentioning

confidence: 99%

InAs-Nanowire-Based Broadband Ultrafast Optical Switch

Liu

Khayrudinov

Yang

et al. 2019

J. Phys. Chem. Lett.

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Due to their tunable optical properties with various shapes, sizes, and compositions, nanowires (NWs) have been regarded as a class of semiconductor nanostructures with great potential for photodetectors, lightemitting diodes, gas sensors, microcavity lasers, optical modulators, and converters. Indium arsenide (InAs), an attractive III−V semiconductor NW with the advantages of narrow bandgap and large electron mobility, has attracted considerable interest in infrared optoelectronic and photonic devices. Here, we studied the ultrafast carrier dynamics and nonlinear optical responses of InAs NWs ranging from 1.0 to 2.8 μm and demonstrated the InAs-NW-based ultrafast broadband optical switch for passively Q-switching in all-solid-state laser systems. Furthermore, we achieved ultrafast optical modulation for laser mode-locking at 1.0 μm, paving the way for their applications in the field of ultrafast optics. These exotic optical properties indicate that InAs NWs have significant potential for various optoelectronic and photonic devices, especially in the mid-infrared wavelength range.

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“…To monitor the regulation of the microstructure and optical properties by the local structure, polarization-dependent SHG has always been a sensitive and effective way to directly identify the interaction between photons and local structures. 30,31 The 820 nm pumping laser is aligned to propagate perpendicular to the (110) face of the crystal and polarize inside this face. The z-axis of the crystal is selected as the Zdirection of the Lab coordinate, as shown in Figure 2a.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Zero-Dimensional Molecular Ferroelectrics with Significant Nonlinear Effect and Giant Entropy

et al. 2022

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The search for ferroelectric materials that have a significant progress in applications, such as ferroelectric field-effect transducers, piezoelectric sensors, nonlinear optical devices, electrocaloric refrigeration, and so forth, remains a great challenge. Here, we report the discovery of two unique molecular ferroelectrics (TMP) 2 (SbX 5 )(SbX 3 ) (TMP = thiomorpholine = (CH 2 ) 4 NH 2 S + , X = Cl (1-Cl), Br (2-Br)), which are the first reported examples of halogenoantimonates(III) and halogenobismuthates(III) with R 2 (MX 5 )(MX 3 )-type zero-dimension (0D) configuration ascribing to the discrete SbX 5 and SbX 3 polyhedrons separated by the TMP cations. (TMP) 2 (SbX 5 )(SbX 3 ) also feature the highest phase transition temperature (T c , in which 362/442 K for 1-Cl and 385/477 K for 2-Br) and giant zero-field entropy change (131.68/109.16 J mol −1 K −1 for 1-Cl and 183.24/150.32 J mol −1 K −1 for 2-Br) in halogenoantimonates(III) and halogenobismuthates(III)-based molecular ferroelectrics. A low thr-coordinated SbX 3 component accelerates the crystallization of (TMP) 2 (SbX 5 )(SbX 3 ) in the noncentrosymmetric structure because it breaks the R 2 MX 5 -type construction. Thus, they exhibit significant room-temperature SHG signals (in which 4.2 × KDP for 1-Cl and 3.8 × KDP for 2-Br) and polarization-dependent SHG response. In addition, ultraviolet−visible absorption and photoluminescence spectra reveal that the band gap is successfully tuned from 3.366 to 2.600 eV for 1-Cl to 2-Br, while emission at 545 nm for 1-Cl is redshifted to 611 nm for 2-Br; both large Stokes shifts and broadband emission characterize the PL of 0D metal halide hybrids and are attributed to the strong coupling of the excitons to multiple phonons. This work will provide an avenue to explore the SHG responses and photoelectric characteristics of lowdimensional halogenoantimonates(III) and halogenobismuthates(III)-based molecular ferroelectrics.

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Highly-sensitive detection of the lattice distortion in single bent ZnO nanowires by second-harmonic generation microscopy

Cited by 4 publications

References 16 publications

Second Harmonic Generation in ZnO Nanowires

Second Harmonic Generation in ZnO Nanowires

InAs-Nanowire-Based Broadband Ultrafast Optical Switch

Zero-Dimensional Molecular Ferroelectrics with Significant Nonlinear Effect and Giant Entropy

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