Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

Jung

et al. 2021

Adv Funct Materials

Antimony triselenide (Sb 2 Se 3 ) nanoflake-based nitrogen dioxide (NO 2 ) sensors exhibit a progressive bifunctional gas-sensing performance, with a rapid alarm for hazardous highly concentrated gases, and an advanced memory-type function for low-concentration (<1 ppm) monitoring repeated under potentially fatal exposure. Rectangular and cuboid shaped Sb 2 Se 3 nanoflakes, comprising van der Waals planes with large surface areas and covalent bond planes with small areas, can rapidly detect a wide range of NO 2 gas concentrations from 0.1 to 100 ppm. These Sb 2 Se 3 nanoflakes are found to be suitable for physisorption-based gas sensing owing to their anisotropic quasi-2D crystal structure with extremely enlarged van der Waals planes, where they are humidity-insensitive and consequently exhibit an extremely stable baseline current. The Sb 2 Se 3 nanoflake sensor exhibits a room-temperature/low-voltage operation, which is noticeable owing to its low energy consumption and rapid response even under a NO 2 gas flow of only 1 ppm. As a result, the Sb 2 Se 3 nanoflake sensor is suitable for the development of a rapid alarm system. Furthermore, the persistent gassensing conductivity of the sensor with a slow decaying current can enable the development of a progressive memory-type sensor that retains the previous signal under irregular gas injection at low concentrations.

Section: Resultssupporting

confidence: 70%

Progressive NO₂ Sensors with Rapid Alarm and Persistent Memory‐Type Responses for Wide‐Range Sensing Using Antimony Triselenide Nanoflakes

Jung

et al. 2021

Adv Funct Materials

“…17 carrier concentration of the channel, modulate the mobility, further affect semiconductor work function, and nally change the current of the FET. 221,222 Based on this mechanism, our group analyzed a WS 2 /IGZO p-n junction-based gas sensor in chemiresistor and transistor mode, respectively. 217 It was found that the transistor shows an ultra-high response aer exposure to NO 2 , with a response% of 499 400% for 300 ppm, which is $27 times higher than that in chemiresistor mode (see Fig.…”

Section: Inorganic Gasesmentioning

confidence: 99%

Recent advances in 2D/nanostructured metal sulfide-based gas sensors: mechanisms, applications, and perspectives

et al. 2020

“…[ 11–15 ] Therefore, researchers are constantly attempting to apply metal oxide semiconductors to new applications beyond displays such as memory and sensor applications, as shown in Figure . [ 16–20 ]…”

Section: Introductionmentioning

confidence: 99%

A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions

et al. 2021

Metal oxide thin‐film transistors have been continuously researched and mass‐produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non‐oxide hybrid structure. The materials of the absorption layer applied to absorb long‐wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next‐generation convergence studies combined with other research fields are introduced and future research directions are detailed.