2008
DOI: 10.1063/1.2968123
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Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

Abstract: We have investigated radio-frequency single-electron transistor operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At a temperature of 4.2 K and with carrier frequency 754.2 MHz, we reach a charge sensitivity of 2.3 × 10 −6 e/ √ Hz over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7 × 10 13 Hz 3/2 /e, which is by one order of magnitude better than for typical RF-SETs.

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Cited by 21 publications
(14 citation statements)
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References 29 publications
(38 reference statements)
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“…2 5͔͒ for our double gate device which corresponds to an rms charge resolution of 0.4 electron in the 0.8 GHz bandwidth of our setup. Within a factor five of the best resolution achieved in SETs, 2 this smaller sensitivity of the present CNT-FETs is balanced by a much larger bandwidth ͑0.8 GHz here against 0.08 GHz in Ref. 2͒ and the possibility to operate at room temperature.…”
mentioning
confidence: 80%
“…2 5͔͒ for our double gate device which corresponds to an rms charge resolution of 0.4 electron in the 0.8 GHz bandwidth of our setup. Within a factor five of the best resolution achieved in SETs, 2 this smaller sensitivity of the present CNT-FETs is balanced by a much larger bandwidth ͑0.8 GHz here against 0.08 GHz in Ref. 2͒ and the possibility to operate at room temperature.…”
mentioning
confidence: 80%
“…However, it should be feasible to engineer much stronger couplings in nanowire or nanotube devices where there is already natural confinement in an additional dimension. In the case of nanotube devices where the leads can dominate the capacitance [25], we expect that the coupling could be made κ 0.5. In summary, we have demonstrated state detection for a semiconductor double quantum dot device using a resonant circuit.…”
Section: Pacs Numbersmentioning
confidence: 99%
“…where BW =10 5 Hz is the resolution bandwidth of the measurement, and the factor ͱ 2 accounts for the fact that there are two side peaks. 9 Even though our result falls short of the best nanotube 8 and nanowire 13 results, it beats the recently obtained rf-SET sensitivities in silicon devices. 14,15 Figure 2͑b͒ also displays clear SNR peaks off zero bias indicating that our device can also work well under finitebias conditions.…”
Section: Methodsmentioning
confidence: 50%