Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor

Mun, Seohyun; Park, Yoonkyung; Lee, Yong Eun Koo; Sung, Myung Mo

doi:10.1021/acs.langmuir.7b02466

Cited by 78 publications

(79 citation statements)

References 26 publications

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“…The I on / I off ratio of the OFET was as high as 1.7 × 10 7 , and the V th value was −7.3 V. As shown in Figure g,h, the 1D OFET presented good sensitivity and reproducibility to the detection of ethanol gas. Mun et al carried out a comprehensive work based on single‐crystal P3HT nanowires (Figure i,j) . The P3HT nanowires were prepared by a liquid‐bridge‐mediated nanotransfer molding (LB‐nTM) method.…”

Section: D Nano/microstructured Oscsmentioning

confidence: 99%

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Gas Sensors Based on Nano/Microstructured Organic Field‐Effect Transistors

Zhang

Zhao

et al. 2019

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105

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Benefiting from the advantages of organic field‐effect transistors (OFETs), including synthetic versatility of organic molecular design and environmental sensitivity, gas sensors based on OFETs have drawn much attention in recent years. Potential applications focus on the detection of specific gas species such as explosive, toxic gases, or volatile organic compounds (VOCs) that play vital roles in environmental monitoring, industrial manufacturing, smart health care, food security, and national defense. To achieve high sensitivity, selectivity, and ambient stability with rapid response and recovery speed, the regulation and adjustment of the nano/microstructure of the organic semiconductor (OSC) layer has proven to be an effective strategy. Here, the progress of OFET gas sensors with nano/microstructure is selectively presented. Devices based on OSC films one dimensional (1D) single crystal nanowires, nanorods, and nanofibers are introduced. Then, devices based on two dimensional (2D) and ultrathin OSC films, fabricated by methods such as thermal evaporation, dip‐coating, spin‐coating, and solution‐shearing methods are presented, followed by an introduction of porous OFET sensors. Additionally, the applications of nanostructured receptors in OFET sensors are given. Finally, an outlook in view of the current research state is presented and eight further challenges for gas sensors based on OFETs are suggested.

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Section: D Nano/microstructured Oscsmentioning

confidence: 99%

“…i) Schematic illustration of OFET based on P3HT single‐crystal nanowire; j) SEM of P3HT nanowire arrays; transfer curves of k) P3HT thin film OFET and l) P3HT nanowire OFET. Reproduced with permission . Copyright 2017, American Chemical Society (ACS).…”

Section: D Nano/microstructured Oscsmentioning

confidence: 99%

Gas Sensors Based on Nano/Microstructured Organic Field‐Effect Transistors

Zhang

Zhao

et al. 2019

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105

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“…The average length of the nanowires is about 1 μm and the height and the width of the nanowires are about 4 and 50 nm, respectively. These micron‐size‐length nanowires exhibit long and efficient π–π stacking of the conjugated backbones therefore they can provide a highway for holes to pass through as a result of the high‐mobility nature of crystalline P3HT nanowires, which is greatly beneficial for improving the performance of P3HT TFTs.…”

Section: Values Of the Device Performance Parameters (Average Values mentioning

confidence: 99%

Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Deng

Jiang

Sun

et al. 2020

Physica Rapid Research Ltrs

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Fabrication of nanowires in polymer films can dramatically enhance the mobility of thin‐film transistors (TFTs). Unlike the popular method of forming nanowires after spin‐coating films, here a water‐bath method to fabricate the micrometer‐long nanowires in the poly(3‐hexylthiophene) (P3HT) solution is introduced, which is suitable for large‐area printing electronic application. The resulting transistor exhibits significantly enhanced mobility and excellent device stability. However, the threshold voltage of the device is increased, compared with the amorphous film device. The underlying mechanism of the mesoscale crystalline induced threshold voltage increase has been rarely studied. The temperature‐dependent characteristics imply that the activation energy of the device with nanowires is higher than that of the amorphous one, indicating nanowires can introduce deep traps. This suggests that the charge transport is mainly limited by the deep traps at the junctions between the nanowires considering the trap density inside the nanowires is significantly low. The deep traps introduced by the junctions can increase the threshold voltage as the device needs higher voltage to fill these traps in the channel before the device is turned on. This explains why the devices with nanowires have an increased threshold voltage while their mobilities are dramatically enhanced.

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“…Therefore, they have been frequently studied for sensing,e specially for fluorescences ensing. [37][38][39][40][41] For the development of chemiresistors, oligothiophenes with well-defined structures are preferred as candidates fort he sensory materials because they possessa tl east the following two advantages: 1) high polarizability of sulfur electrons may provide av ariety of intra-and intermolecular interactions, which are favorable for charget ransport;a nd 2) easy modulation of chemical and physicalp roperties through convenient structural modification. [42][43][44] However,o ligothiophenes are photochemically and thermally unstable,w hich adds al imitation to their applications in opticalsensing.…”

Section: Introductionmentioning

confidence: 99%

Naphthyl End‐Capped Terthiophene‐Based Chemiresistive Sensors for Biogenic Amine Detection and Meat Spoilage Monitoring

Liu

Mukherjee

Huang

et al. 2019

Chemistry An Asian Journal

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Ar eliable and sensitived etection of biogenic amines (BAs) is essential to ensure food safetya nd maintain public health.I nt his study,t wo naphthyl end-cappedt erthiophene derivatives, namely,5 -(naphthalen-1-yl)-2,2':5',2''terthiophene (NA-3T)a nd 5,5''-di(naphthalen-1-yl)-2,2':5',2''terthiophene (NA-3T-NA), were employed to developc hemiresistive sensorsf or detecting gaseous BAs. In contrast to NA-3T,t he NA-3T-NA-based sensors howedah ighers ensitivity for trimethylamine (TMA)w ith an experimental detection limit lower than 22 ppm, and for aromatic BAs, includ-ing dopamine, histamine, tryptamine, and tyramine. Additionally,t he recovery time for TMA wasf ound to be shorter than 23 s. In addition, both sensors were successfully used for an in situ evaluationo fm eat freshness by monitoring the concentration of relevant volatile BAs. The difference in the sensing performances of the two chemiresistive sensors was tentatively ascribed to different packing structures of the derivatives and the adlayer structures of the films developed with the compounds.Supporting information and the ORCID identification number(s) for the author(s) of this article can be found under: https://doi.

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Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor

Cited by 78 publications

References 26 publications

Gas Sensors Based on Nano/Microstructured Organic Field‐Effect Transistors

Gas Sensors Based on Nano/Microstructured Organic Field‐Effect Transistors

Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Naphthyl End‐Capped Terthiophene‐Based Chemiresistive Sensors for Biogenic Amine Detection and Meat Spoilage Monitoring

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