Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

Abstract

Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W−1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.

Recent advances in MoS2-based materials for electrocatalysis

“…(6) In addition to the fields of HER/NRR/CO 2 RR activity, in just the past few years, owing to its superior electronic properties and capacities, MoS 2 has also been widely employed in a wide range of applications such as the environmental applications, 222 electrochemical oxygen reduction reaction (ORR), 223 NO reduction, 224 supercapacitors, 225 sensors, 226 secondary batteries ( e.g. , Li-ion batteries (LIBs), 227 Li–S batteries, 228 Li–O 2 batteries, 229 Na–S batteries, 230 Na–O 2 batteries, 231 Mg-ion batteries, 232 Al-ion batteries, 233 and Na-ion batteries, 234 etc.…”

Direct Detection of Inhomogeneity in CVD-Grown 2D TMD Materials via K-Means Clustering Raman Analysis

“…), have attracted considerable attention due to their unique physical and chemical properties, exhibiting promising applications on optoelectronics [1][2][3], valleyelectronics [4] and chemical sensors [5,6]. Both fundamental research and potential applications are highly dependent on the quality of TMD materials [7][8][9][10]. Conventionally, there are two kinds of methods to prepare 2D materials: top-down and bottom-up approaches.…”

“…On the other hands, bottom-up synthesis methods (such as intercalation assisted exfoliation [11], physical vapor deposition [12], hydrothermal synthesis [13], and chemical vapor deposition (CVD)) can offer a lateral size of TMD films up to hundreds of micrometers. In particular, CVD has been well-developed to produce large area crystals with controllable thickness and stacking sequences [9,10,14]. As a matter of fact, it is still a challenge to obtain highly uniform TMD materials with high performance on carrier mobility and conductivity with the CVD method.…”

Self-Powered Sensors: New Opportunities and Challenges from Two-Dimensional Nanomaterials

“…Sensors are key ingredients of next-generation electronics in the Internet of Things (IoT) because they contribute to collecting essential signals. The development of various sensors, including photosensors [1][2][3][4], gas sensors [5,6], temperature sensors [7][8][9], and biosensors [10][11][12][13] is extensive, which accelerates innovation in new technologies such as the aforementioned IoT. To realize the desired sensing functions, detection performance, such as high sensitivity, robust immunity to noise, and fast response times, should be comprehensively improved [14][15][16][17].…”