Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

Baek, In-Gyu; Lee, M.S.; Seo, Sehun; Lee, M.J.; Seo, David H.; Suh, Dongseok; Park, J.C.; Park, S.O.; Kim, H.S.; Yoo, In-Kyeong; Chung, U‐In; Moon, Jiwon

doi:10.1109/iedm.2004.1419228

Cited by 420 publications

(212 citation statements)

References 5 publications

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“…An Evolutionary Optimization (EO) environment has been developed at UTK to configure the neural networks in a DANNA [1][2][3][4][5][6]. The EO trains over parameters of the network (weights and delay distances on synapses and thresholds on neurons) as well as the structure (the number and placement of neurons and synapses) and the dynamics of the network.…”

Section: Resultsmentioning

confidence: 99%

Multifunctional Nanotechnology Research

Nostrand¹,

Joseph²

2016

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Section: Resultsmentioning

confidence: 99%

Multifunctional Nanotechnology Research

Nostrand¹,

Joseph²

2016

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“…For trap charging and discharging mechanism, the most obvious characteristics appear in two behaviors, the clear negative differential resistance (NDR) behavior, and a behavior similar to the SV model proposed by Simmons and Verderber [34], in which an N-shaped I-V characteristic is generally obtained in positive voltage [27,35].…”

Section: Trap Charging and Dischargingmentioning

confidence: 99%

An overview of resistive random access memory devices

Long

Liu

et al. 2011

Chin. Sci. Bull.

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With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.

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“…One emerging candidate is the resistance random access memory (RRAM) based on metal oxides [2,3] and organic semiconductors [4][5][6]. These RRAMs have shown electrically induced resistive switching effects and have been proposed as the basis for future non-volatile memories.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

Rocha

Chen

Gomes

2012

Technological Innovation for Value Creation

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Abstract. Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording currentvoltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit. Keywords:Resistive Random Access Memory (RRAM), Switching, Electrical Bistability, Non-Volatile Memory, Negative Differential Resistance (NDR). IntroductionOrganic memory devices are becoming interesting candidates for electronic applications in information technologies [1]. One emerging candidate is the resistance random access memory (RRAM) based on metal oxides [2,3] and organic semiconductors [4][5][6]. These RRAMs have shown electrically induced resistive switching effects and have been proposed as the basis for future non-volatile memories. They associate the advantages of Flash and DRAM (dynamic random access memories) such as higher packing density, faster switching speed and longer storage life. Although, several metal-oxides structures exhibited resistive switching properties, the measured switching parameters vary in a wide range, which calls for a more consistent and uniform characterization methodologies. Furthermore, reported switching speeds vary by orders of magnitude [7][8][9][10][11][12][13][14]. The values range from nanoseconds to milliseconds. The inconsistencies might be due to different semiconductors, device geometries, or measurement procedures. In order to clarify these discrepancies, we characterize the switching speed of a metal-oxide memory device using dynamic measurements and equivalent circuit modeling.The dynamic characterization of the metal-oxide polymer structure through a double RC circuit provides insight on the switching phenomenon. It is demonstrated the relevance of the oxide layer and its role on limiting the switching speed. Contribution to Value CreationOrganic based memory devices provide a simplified manufacturing process yielding low-cost, flexible, and light-weight area approaching the nano-scale dimensions.

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Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

Cited by 420 publications

References 5 publications

Multifunctional Nanotechnology Research

Multifunctional Nanotechnology Research

An overview of resistive random access memory devices

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

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